FAB

AMF Silicon Photonics General-Purpose Fabrication Process

Description

  • silicon-on-insulator, 220-nm top Si film, 2000-nm buried oxide (BOX)
  • High resistivity handle wafer (>750 ohm-cm)
  • 193-nm deep UV lithography for waveguides, enabling features down to approximately 140 nm
  • Two partial etches and one full etch of the top silicon
  • 6 implants for optical modulators (P++, P+, P, N++, N+, N)
  • Germanium deposition and implanting for photodetectors
  • Two metal levels, no planarization
  • Front side oxide etch to selectively expose waveguides, e.g. for sensing applications
  • Deep trench with etched facets for edge coupling
  • Supports design and fabrication of a range of components and systems consisting of:
    • modulators
    • detectors
    • waveguides (strip or ridge)
    • gratings for fiber coupling
    • deep trench and nano-tapers for edge coupling
    • multiplexers (diffraction or arrayed waveguide) and filters (resonators, Bragg gratings)
    • ring and disk resonators

Features

  • SOI, 220 nm top Si, 2000 nm BOX
  • 193 nm lithography for waveguides
  • 6 implants for optical modulators
  • Ge deposition & implanting for photodetectors
  • Two metal levels for routing plus metal heater

Pricing

$14,000
(Per 3 x 8 mm2 design)

$4,300
(Per 3 x 8 mm2 design)

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