FAB

AMS 0.35 µm CMOS Process Technology (High-Voltage)

Description

This 0.35 µm CMOS technology offers four metal layers, digital standard cells, an anti-reflective coating and high-efficiency photodiodes, and bulk micromachining.

CMC’s multi-project wafer service delivers this technology from austriamicrosystems, offering three processes: BasicOpto and High-Voltage (see details below). The technology is suitable for:

High-Voltage Process (H35B4D3) Details

Note: The expected number of chips to be delivered for this technology is 25.

Features

  • 3.3 V/5 V/50 V
  • 2P4MH35B4D3kit includes:
    • standard cell
    • IO
    • bondpad

Applications

The technology is suitable for:

  • Embedded photodiodes, high-density CMOS imaging and optoelectronic detection
  • High-voltage operation (maximum 20V gate, 50V operating voltage)
  • Mixed-signal designs
  • High-speed digital circuits
  • For the Basic and Opto processes, bulk micromachining of MEMS structures

Potential applications include:

  • Biomedical imaging
  • Automotive and environmental sensors

Pricing

Academics in Canada

$2,100/mm2

Academics in Canada Peer Reviewed

$600/mm2

SponsorChip helps companies enhance their research efforts and links to academic researchers.

Scroll to Top

We're Hiring!

If you’re ready for a new challenge and want to learn everyday while working with talented colleagues, we want to connect with you.

X