Dr. Barlage is currently a Professor in Electrical and Computer Engineering. Prior to joining the University of Alberta, Dr. Barlage was at North Carolina State University where he was among the first to produce an enhancement mode GaN MOSFET. For these efforts, he was recognized by the US National Science Foundation with a CAREER young investigator award. While there he investigated different rare earth metal oxides for use in a MOSFET structure, and co-led a team that demonstrated the first selective area regrowth for source drains in GaN based transistors. His students also produced the highest performing GaN MOSFET with a Schottky barrier source –drain to date, this work received best student paper honors at the International Symposium for Device Research. Prior to NC State, Dr. Barlage was at Intel corporation where he was lab manager for the Novel Device Lab. While there he was part of the team that introduced the first high-k gate dielectric for logic, produced the smallest functional transistor in 2000 (Named to MIT’s TR35 list in 2002 for his contributions to this work) and explored the limits of transistor technology with the triple gate transistor as a manufacturable alternative to nano-wire based electronics. Dr. Barlage received his Ph.D. at the University of Illinois in Urbana-Champaign in 1997 focusing on modeling of InGaP/GaAs Hetero-junction Bipolar transistors. During his studies he was also employed by the US Air Force Wright labs Sensors Directorate where he worked on methods to enhance dynamic thermal stability of electronic devices.