Fab: TSMC 90 nm CMOS Process Technology

Fab: TSMC 90 nm CMOS Process Technology

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Description

This 90-nanometer CMOS technology offers a mixed-signal/RF 1P9M low-power process with ultra-thick (34kA) top metal options.

CMC’s multi-project wafer service delivers Taiwan Semiconductor Manufacturing Company (TSMC) nanometer and micron-scale CMOS technologies through partnership with MOSIS.

The 90nm CMOS (CRN90G) process is suitable for:

  • Low-power circuits
  • RF/mixed-signal designs
  • High-speed digital circuits

Potential applications include:

  • RF, microwave systems
  • Optical communication systems

Process Details:

  • Technology Features:
    • Metal-insulator-metal capacitor
    • Resistor options
  • Supply Voltages:
    • 1.0V
    • 2.5V

Please review the licensing procedures. For more information, contact licensing@cmc.ca or 613-530-4787.


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