GLOBALFOUNDRIES 130 nm BiCMOS SiGe 8HP
CMC Microsystems offers access to the GLOBALFOUNDRIES (GF) 130 nm High-performance SiGe BiCMOS technology. This technology is well suited for the design of high-speed, low-noise mixed-signal systems. The process is configured for 1.2 V/2.5 V high-performance operation at RF frequencies. The technology offers a low-noise figure, high-gain and breakdown operation with excellent thermal stability. The advanced Copper metallization feature of the technology enables high current densities at high temperatures. The technology PDK comprises of a broad mix of standard and RF-centric elements that facilitate an integrated digital and RF design environment.
For more information, please refer to the GLOBALFOUNDRIES SiGe HP Technologies web page.
CMC Microsystems offers access to GLOBALFOUNDRIES technologies via its cost-shared multi-project wafer runs. To access this technology, please contact email@example.com.
The process flavour supported by CMC is:
Mixed-signal/RF 1P8M process configured for 1.2 V/2.5 V supply and designed for high performance and speed.
- 1.2 V/2.5 V CMOS supply
- 1P8M process
- High-performance FETs
- ft/fmax 200/265GHz
- Twin well CMOS technology
- MIM/Dual MIM Capacitors
- Series/Parallel spirals Inductors
- µm/mm wave passive components
- Thin/Thick dual gate oxide
This technology is suitable for:
- RF/mixed-signal designs
- High-speed digital circuits
- Low power circuits
Potential applications include:
- RF, microwave systems
- Optical communication systems
- Automotive/Aerospace Systems
- Wireless infrastructures