FAB

Optoelectronic/Photonic Process Technology: III-V Epitaxy on GaAs Substrates

Description

Features:

  • MOCVD epitaxy of InGaAs, InGaAsP and InAlGaAs lattice matched and strained MQW and Quantum Dot materials on 3” InP substrate
  • MBE epitaxy of high purity InGaAs, InAlAs and InP material on 2” InP substrate
  • MOCVD epitaxy of InGaAs, AlGaAs, InAlGaAs lattice matched and strained MQW materials on 3” and 4” GaAs substrates
  • MBE epitaxy of high purity GaAs, AlGaAs, and exotic alloys on 3” GaAs substrate
  • MOCVD epitaxy of GaAs, AlGaAs, AlInP, InGaP, InGaAs and AlInGaAs on 6” Ge substrate

Wafer deliverables will go with the standard metrologies of photoluminescence (PL) and x-ray diffraction

Other epitaxy metrologies are available with additional fees

Kits:

  • The epi-form template

Pricing:

The cost is highly structural dependent. Please contact zhang@cmc.ca

Features

Features – Provide III – V materials to fabricate

  • Lasers, LEDs and SOAs on InP substrate
  • VCSELs, nonlinear optics and high mobility devices on GaAs substrate
  • Multi-junction solar cells and converters on Ge substrate
  • Other applications

 

Kits

Additional Libraries

Pricing

SponsorChip helps companies to academic researchers.