TSMC 0.18 µm CMOS Process Technology


This 0.18-micron CMOS technology is offered with a robust design kit (with a commercial cell library) that supports RF, analog, mixed-signal and digital design flows, plus various tutorials that use this technology for the design example.

The 0.18 µm CMOS (CMC term is CMOSP18) process is suitable for:

CMC’s multi-project wafer service delivers Taiwan Semiconductor Manufacturing Company (TSMC) nanometer and micron-scale CMOS technologies.

  • Analog circuits
  • Full custom digital circuits
  • RF circuits
  • Mixed-signal circuits

Process Details:

  • Electrical Contact
  • Forming Technology:
    • Salicide
  • Layers:
    • 6 metal, 1 poly
  • Supply Voltages:
    • 1.8 V and 3.3 V
  • Minimum Drawn Gate Length:
    • 0.18 μm
  • Options:
    • Logic (default)
    • Mixed-signal (deep N-well and metal-insulator-metal [MiM] capacitor)
    • Thick metal

Note: The expected number of chips to be delivered for this technology is 40.


  • 1.8/3.3V
  • 1P6M
  • mimcap
  • LVT/native/HVT




  • standard cell
  • IO
  • bondpad


(Minimum charge is for a 1.1 x 1.1 mm2 design)

(Minimum charge is for a 1.1 x 1.1 mm2 design)

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