FAB

TSMC 0.18 µm CMOS Process Technology

Description

CMC’s multi-project wafer service delivers Taiwan Semiconductor Manufacturing Company (TSMC) nanometer and micron-scale CMOS technologies.

This 0.18 μm CMOS technology is offered with a robust design kit (with a commercial cell library) that supports RF, analog, mixed-signal and digital design flows, plus various tutorials that use this technology for the design example.

Process Details

  • Electrical Contact
  • Forming Technology: Salicide
  • Layers: 6 metal, 1 poly
  • Supply Voltages: 1.8 V and 3.3 V
  • Minimum Drawn Gate Length: 0.18 μm
  • Options:
    • Logic (default)
    • Mixed-signal (deep N-well and metal-insulator-metal [MiM] capacitor)
    • Thick metal

Note: The expected number of chips to be delivered for this technology is 40.

Applications

The 0.18 µm CMOS (CMC term is CMOSP18) process is suitable for:

  • Analog circuits
  • Full custom digital circuits
  • RF circuits
  • Mixed-signal circuits

Features

  • 1.8 V/3.3 V
  • 1P6M
  • mimcap
  • LVT/native/HVT

Design Kits and Libraries

Pricing

List Price
Price for Subscribers
Note: List pricing does not include Engineering Support – contact fab@cmc.ca for a quote.

Note: Discounted pricing is available to academics in Canada with a CMC Subscription. You must sign in to see it.

Licensing

Minimum Subscription Required: Research

Does your research benefit from products and services provided by CMC Microsystems?

The CMC SponsorChip program helps companies enhance their research efforts and links to academic researchers.

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