Four-to-six-week turnaround time for laser cleaved silicon devices
In collaboration with INO, CMC has developed a technique for laser assisted cleaving of SOI devices, and is offering this service to researchers at subsidized prices.
Overview
The estimated turnaround time for this service is four to six weeks.
Processing takes place at INO.
Laser is used to trigger the location of cleaving.
The cleaving is done with an accuracy of +/-15 µm.
The technique provides good facet quality for end-fire coupling.