FAB

Laser-Assisted Cleaving

In collaboration with INO, CMC has developed a technique for laser assisted cleaving of SOI devices, and is offering this service to researchers at subsidized prices.   

Cost

Please contact pricing@cmc.ca for a quote. 

Get Support and Access this Service

For engineering support questions and to request access, please e-mail fab@cmc.ca.

Technology Overview

  • The estimated turnaround time for this service is four to six weeks.
  • Processing takes place at INO.
  • Laser is used to trigger the location of cleaving.
  • The cleaving is done with an accuracy of +/-15 µm.
  • The technique provides good facet quality for end-fire coupling.
  • Thin Silicon layers are accepted (up to 5 µm).
  • For chip dimensions, see Guidelines for Laser Assisted Cleaving.
  • We recommend alignment marks on chips to indicate where the cleaving is needed.

Applications/Uses

  • Intended for use with Silicon photonics and other Silicon-based chips
  • Cleaving along vertical plane of the waveguide
  • Singulation of specific area of a chip

SponsorChip helps companies to academic researchers.

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