FAB

Available Technologies

Through supplier partnerships, we offer multi-project wafer services and related fabrication services in a variety of technologies. View our fabrication schedule online.

All prototyping technologies remain open for international academic research and industrial R&D. For MPW Quotes, contact fab@cmc.ca.  For Dedicated/High-Volume Run Quotes, contact sales@cmc.ca.
Process NameFeaturesDesign Kits and LibrariesPrice for SubscribersPrice for Subscribers, Peer ReviewedPrice for Academics outside of Canada or Industry

AMF Silicon Photonics General-Purpose Fabrication Process

 

amf Advanced Micro Foundry logo with transparent background

  • SOI, 220 nm top Si, 2000 nm BOX
  • 193 nm lithography for waveguides
  • 6 implants for optical modulators
  • Ge deposition & implanting for photodetectors
  • Two metal levels for routing plus metal heater

$14,000
(Per 3 x 8 mm design)

$5,400
$1,000
(Per 3 x 8 mm design)

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
AMF Silicon Photonics, industry, photonics

AMS 0.35 µm CMOS Process Technology (Basic)

 

  • 3.3 V/5 V
  • 2P4M

$1,200/mm2

$600/mm2
$100/mm2

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
AMS, industry, microelectronics

AMS 0.35 µm CMOS Process Technology (High-Voltage)

 

  • 3.3 V/5 V/50 V
  • 2P4MH35B4D3kit includes:
    • standard cell
    • IO
    • bondpad

$2,100/mm2

$600/mm2
$100/mm2

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
AMS, industry, microelectronics

AMS 0.35 µm CMOS Process Technology (Opto)

 

  • 3.3 V/5 V
  • 2P4M
  • anti-reflective coating

$1,975/mm2

$600/mm2
$100/mm2

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
AMS, industry, microelectronics

Compound Semiconductor Epitaxy

 

  • Molecular Beam Epitaxy (MBE)
  • Gas-Source MBE
  • Metal-Organic Chemical Vapor Deposition (MOCVD)

Structural dependent. Please contact zhang@cmc.ca.

N/A

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
photonics

Electronic Sensor Platform (ESP)

 

  • Silicon junction field effect transistors with unpassivated gate, enabling user-deposition of sensor material
  • 1 metal routing layer, silicon substrate
  • Up to 10 copies per design (10 x 10 mm).  Available as bare die or packaged parts

$3,025
(Per 10 x 10 mm2 design)

$1,000
$100
(Per 10 x 10 mm2 design)

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
3IT, Emerging, Experimental

GLOBALFOUNDRIES 12 LP

 

  • Logic Voltages → Vnom: 0.8V, Vmax: 0.945V
  • 4 VTs: SLVT / LVT / RVT / HVT
  • IO offering: 1.2 V, 1.35 V, 1.5 V and 1.8 V EG Devices
  • Well resistor, precision MOL resistor, MIM / MIM4 / APMOM / MOS / VNCAP capacitors, ESD, eFuse, VPNP, VNPN and Diodes, Inductors, Transmission line
  • Interlevel Low-K and Ultralow-K dielectrics
  • Packaging options: C4 solder, Round or Oblong Copper Pillar Bump, Micro pillar Bump
  • GF12lp0_4.0
  • Device library
  • RF library
  • ESD library

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

N/A

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
GLOBALFOUNDRIES, microelectronics

GLOBALFOUNDRIES 130 nm BiCMOS SiGe 8HP

 

Due to low-demand, Global Foundries will no longer be offering this technology.  As an alternate technology, please consider the higher-performance 8XP flavour.

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

N/A

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
GLOBALFOUNDRIES, microelectronics

GLOBALFOUNDRIES 22FDX FDSOI 22 nm

 

  • 0.4 V to 0.8 V nominal core voltage
  • 1.2 V / 1.5 V / 1.8 V IO options
  • Four core device Vt’s (FBB, RBB & eLVT)
  • RF BEOL /w ultra thick metal stacks
  • APMOM capacitor
  • GF22FDX-EXT

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

N/A

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
GLOBALFOUNDRIES, industry, microelectronics

GLOBALFOUNDRIES 45 nm RFSOI

  • 1 V/1.5 V/1.8 V
  • 1P8M process
  • Native/HVT/SVT/UVT FETs
  • N+ silicide resistor
  • Vertical natural capacitor
  • BEOL inductors
  • Thin oxide Varactor
  • ft/fmax 290/410 GHz
  • 45RFSOI-RF V1.2_0.2

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

N/A

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
GLOBALFOUNDRIES, industry, microelectronics

GLOBALFOUNDRIES 90 nm BiCMOS SiGe 9HP

 

  • 1.2 V/1.8 V/2.5 V/3.3 V 
  • 1P10M process 
  • Native/HVT FETs 
  • ft/fmax 310/370GHz 
  • Twin_ or triple_well (NFET in isolated pwell) CMOS technology 
  • MIM/Dual/high Q MIM capcitors 
  • Series/Parallel spirals Inductors 
  • PIN / Schottky Barrier diode 
  • 90HPSIGE-9HP  V1.3_0.0

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

N/A

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
GLOBALFOUNDRIES, industry, microelectronics

GLOBALFOUNDRIES SiGe 8XP BiCMOS 130 nm

 

  • 2 V/2.5 V Core voltage
  • 5 V/3.3 V IO voltage
  • 5 metal base stack, with the option to 8 levels of metallization
  • High performance enhanced FET
  • Ft/fmax 250/340 GHz
  • MIM and Dual MIM
  • Regular Vt and Triple well FET options
  • Series/Parallel spirals Inductors
  • µm/mm wave passive components
  • Thin/Thick dual gate oxide

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

N/A

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
GLOBALFOUNDRIES, industry, microelectronics

GLOBALFOUNDRIES 90 nm CMOS-photonics 9WG

 

  • SOI substrate
  • Far-BEOL V-groove for fibre attach
  • 1P7M
  • LVT

Pricing will be provided under a 3-way NDA. The minimum block size is 5 x 2.455 mm per design. Contact fab@cmc.ca.

N/A

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
GLOBALFOUNDRIES, industry, photonics, silicon photonics

MEMSCAP PiezoMUMPs Process Technology

 

  • SOI MEMS
  • 25um structure layer
  • piezoelectric metal

$2,325
(per 4.3 x 4.3 mm design) 

$550
$100
(per 4.3 x 4.3 mm design)

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
MEMS, MEMSCAP

MEMSCAP PolyMUMPs Multi-User MEMS Process Technology

 

  • Surface MEMS
  • Three structure layers

$2,325
(per 5 x 5 mm2 design) 

$550
$100
(per 5 x 5 mm2 design) 

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
MEMS, MEMSCAP

MEMSCAP Post-Processing for PolyMUMPs

 

  • Optional HF release and supercritical carbon dioxide drying.
  • Allows users to develop acoustics, motion sensors, optical MEMS, etc.

$825
(per 4.75 x 4.75 mm design)

$325
$100
(per 4.75 x 4.75 mm design)

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
MEMS, MEMSCAP

STM 28 nm FD SOI CMOS

 

ST Microelectronics logo

  • 1.0 V/1.8 V
  • 1P8M
  • no mimcap
  • LVT

$12,500/mm2
(Minimum charge is for a 1.25 mm2 design)

$5,000/mm2
$2,000/mm
(Minimum charge is for a 1.25 mm2 design)

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
microelectronics, STM

Teledyne DALSA MIDIS Platform

 

  • Getter-free high-vacuum sealing allows resonator Q factors > 20,000
  • Efficient wafer-level packaging minimizes overall die size
  • 1.5-μm feature size in a 30-μm thick membrane
  • Comb height control allows out-of-plane sensing
  • TSV allows compact design ready for co-packaging
  • Deliver 40 copies for each design
  • Sealed-cavity MEMS
  • 30-μm structure layer
  • High-vacuum

$9,800
(per 4 x 4 mm2 design) 

$4,250
$1,000
(per 4 x 4 mm2 design) 

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
industry, MEMS, Teledyne

Teledyne Micralyne Micralyne MicraGEM-Si™ MEMS Process

 

Teledyne DALSA logo

  • Two thick SOI structure layers with up to three functional levels of silicon thickness option. This enables structures such as vertical comb-drive actuators.
  • Base and top device layers are electrically connected through the bond interface, allowing 3D routing of electrical signals.
  • Patterned low-stress gold metallization on the top surface is suited for highly reflective mirrors and contact pads for gold wire bonding.
  • Available in sizes 4 mm x 4 mm, 4 mm x 8 mm, and 8 mm x 8 mm
  • SOI MEMS
  • Two structure layers
  • Three trench depths

Contact fab@cmc.ca.

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
MEMS, Teledyne

TSMC 0.13 µm CMOS RF Mixed-Signal Process

 

  • 1.2 V/3.3 V
  • 1P8M
  • mimcap

$2,050/mm2

$1,025/mm2
$100/mm2

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
microelectronics, TSMC

TSMC 0.18 µm CMOS Process Technology

 

  • 1.8 V/3.3 V
  • 1P6M
  • mimcap
  • LVT/native/HVT

$1,100/mm2

$425/mm2
$100/mm2

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
microelectronics, TSMC

TSMC 0.35 µm CMOS Process Technology

 

  • 3.3 V/5 V
  • 2P4M

$1,400/mm2
(Minimum charge is for a 12 mm2 design)

$250/mm2
$100/mm2
(Minimum charge is for a 12 mm2 design)

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
microelectronics, TSMC

TSMC 28 nm CMOS Process Technology (HPC+RF)

 

  • 0.9 V (core)/1.8 V (I/O)
  • 1P9M (1P9M_6x1z1u)
  • High K – Metal gate
  • Standard cell

$19,450/mm2

$8,775/mm2
$2,000/mm2

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
microelectronics, TSMC

TSMC 65 nm GP CMOS Process Technology

 

  • 1.0 V/2.5 V
  • 1P9M
  • mim/momcap
  • LVT/native/HVT

$6,350/mm2

$2,350/mm2
$1,000/mm2

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
microelectronics, TSMC

TSMC 65 nm LP CMOS Process Technology

 

  • 1.2 V/2.5 V
  • 1P9M
  • mim/momcap
  • LVT/native/HVT

$6,350/mm2

$2,350/mm2
$1,000/mm2

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
microelectronics, TSMC

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CMC Planned Service Disruption

Thursday, February 4
7 am to 9 am EST

CMC is performing upgrades on our datacenter infrastructure that will temporarily affect access to CMC online services. We apologize for the inconvenience this will cause.

We apologize for the inconvenience this may cause.

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