FAB

Silicon Photonics General-Purpose

Product Page

• SOI, 220 nm top Si, 2000 nm BOX
• 193 nm lithography for waveguides
• 6 implants for optical modulators
• Ge deposition & implanting for photodetectors
• Two metal levels for routing plus metal heater

• Design Kit: Mentor Graphics L-Edit Photonics for the Advanced Micro Foundry (AMF) Silicon Photonics Fabrication Process
• Design Kit: Luceda-Tanner-AMF Silicon Photonics Design Platform
• Design Kit: Mentor Graphics Pyxis for the Advanced Micro Foundry (AMF) Silicon Photonics Fabrication Process

$14,000
(Per 3 x 8 mm design)

$5,400
$1,000
(Per 3 x 8 mm design)

AMS 0.35 μm CMOS – Basic

Product Page

• 3.3 V/5 V
• 2P4M

• Design Kit: AMS 0.35-micron CMOS Process Design Kit
• Design Kit: AMS 0.35-micron CMOS Process Design Kit
• Design Methodology: Digital IC Design Flow
• Design Flow: Analog IC
• Design Methodology Kit: Cadence Analog/Mixed-Signal (AMS) Design Flows
• Design Flow: Digital IC Design (from RMC)

$1,200/mm²

$600/mm²
$100/mm²

AMS 0.35 μm CMOS – High Voltage

Product Page

• 3.3 V/5 V/50 V
• 2P4MH35B4D3kit includes:
  • standard cell
  • IO
  • bondpad

• Design Kit: AMS 0.35-micron CMOS Process Design Kit
• Design Methodology: Digital IC Design Flow
• Design Flow: Analog IC
• Design Methodology Kit: Cadence Analog/Mixed Signal (AMS) Design Flows
• Design Flow: Digital IC Design (from RMC)

$2,100/mm²

$600/mm²
$100/mm²

AMS 0.35 μm CMOS – Opto

Product Page

• 3.3 V/5 V
• 2P4M
• anti-reflective coating

• Design Kit: AMS 0.35-micron CMOS Process Design Kit
• Design Methodology: Digital IC Design Flow
• Design Flow: Analog IC
• Design Methodology Kit: Cadence Analog/Mixed-Signal (AMS) Design Flows
• Design Flow: Digital IC Design (from RMC)

$1,975/mm²

$600/mm²
$100/mm²

Open-Gate Silicon JFET

Product Page

• Silicon junction field effect transistors with unpassivated gate, enabling user-deposition of sensor material
• 1 metal routing layer, silicon substrate
• Up to 10 copies per design (10 x 10 mm).  Available as bare die or packaged parts

Design Kit: Open-Gate Silicon JFET (OG Si-JFET) in L-Edit and Synopsys Sentaurus

$3,025
(Per 10 x 10 mm² design)

$1,000
(Per 10 x 10 mm² design)

GLOBALFOUNDRIES 130nm BiCMOS SiGe 8HP

Product Page

Due to low-demand, Global Foundries will no longer be offering this technology.  As an alternate technology, please consider the higher-performance 8XP flavour.

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

GLOBALFOUNDRIES 22FDX FDSOI 22nm Process

Product Page

• 0.4 V to 0.8 V nominal core voltage
• 1.2 V / 1.5 V / 1.8 V IO options
• Four core device Vt’s (FBB, RBB & eLVT)
• RF BEOL /w ultra thick metal stacks
• APMOM capacitor

• GF22FDX-EXT

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

GLOBALFOUNDRIES 45nm RFSOI

Product Page

• 1 V/1.5 V/1.8 V
• 1P8M process
• Native/HVT/SVT/UVT FETs
• N+ silicide resistor
• Vertical natural capacitor
• BEOL inductors
• Thin oxide Varactor
• ft/fmax 290/410 GHz

• 45RFSOI-RF V1.2_0.2

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

GLOBALFOUNDRIES 90nm BiCMOS SiGe 9HP

Product Page

• 1.2 V/1.8 V/2.5 V/3.3 V 
• 1P10M process 
• Native/HVT FETs 
• ft/fmax 310/370GHz 
• Twin_ or triple_well (NFET in isolated pwell) CMOS technology 
• MIM/Dual/high Q MIM capcitors 
• Series/Parallel spirals Inductors 
• PIN / Schottky Barrier diode 

• 90HPSIGE-9HP  V1.3_0.0

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

GLOBALFOUNDRIES SiGe 8XP BiCMOS 130nm

Product Page

• 2 V/2.5 V Core voltage
• 5 V/3.3 V IO voltage
• 5 metal base stack, with the option to 8 levels of metallization
• High performance enhanced FET
• Ft/fmax 250/340 GHz
• MIM and Dual MIM
• Regular Vt and Triple well FET options
• Series/Parallel spirals Inductors
• µm/mm wave passive components
• Thin/Thick dual gate oxide

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

GLOBALFOUNDRIES 90nm CMOS-photonics 9WG

Product Page

• SOI substrate
• Far-BEOL V-groove for fibre attach
• 1P7M
• LVT

Pricing will be provided under a 3-way NDA. The minimum block size is 5 x 2.455 mm per design. Contact fab@cmc.ca.

MEMSCAP PiezoMUMPs

Product Page

• SOI MEMS
• 25um structure layer
• piezoelectric metal

• Design Kit: PiezoMUMPs for Coventorware
• Design Kit: MEMSCAP PiezoMUMPs Design Handbook

$2,325
(per 4.3 x 4.3 mm design) 

$550
$100
(per 4.3 x 4.3 mm design)

MEMSCAP PolyMUMPs Multi-User MEMS Process Technology

Product Page

• Surface MEMS
• Three structure layers

• Design Kit: PolyMUMPs MEMS Process for MEMSPro V7.0
• Design Kit: PolyMUMPs Design Handbook for MEMSPro
• Design Kit: PolyMUMPs MEMS Process for CoventorWare

$2,325
(per 5 x 5 mm² design) 

$550
$100
(per 5 x 5 mm² design) 

MEMSCAP Post-Processing for PolyMUMPs

Product Page

• Optional HF release and supercritical carbon dioxide drying.
• Allows users to develop acoustics, motion sensors, optical MEMS, etc.

• Design Kit: PolyMUMPs MEMS Process for MEMSPro V7.0
• Design Kit: PolyMUMPs Design Handbook for MEMSPro

$825
(per 4.75 x 4.75 mm design)

$325
$100
(per 4.75 x 4.75 mm design)

III-V Epitaxy on GaAs Substrates, InP and Ge Substrates

Product Page

• Provide III – V materials to fabricate
• Lasers, LEDs and SOAs on InP substrate
• VCSELs, nonlinear optics and high-mobility devices on GaAs substrate
• Multi-junction solar cells and converters on Ge substrate
• MOCVD epitaxy of InGaAs, InGaAsP and InAlGaAs lattice-matched and strained MQW and Quantum Dot materials on 3” InP substrate
• MBE epitaxy of high purity InGaAs, InAlAs and InP material on 2” InP substrate
• MOCVD epitaxy of InGaAs, AlGaAs, InAlGaAs lattice-matched and strained MQW materials on 3” and 4” GaAs substrates
• MBE epitaxy of high purity GaAs, AlGaAs, and exotic alloys on 3” GaAs substrate
• MOCVD epitaxy of GaAs, AlGaAs, AlInP, InGaP, InGaAs and AlInGaAs on 6” Ge substrate
• Wafer deliverables will go with the standard metrologies of photoluminescence (PL) and x-ray diffraction
• Other epitaxy metrologies are available with additional fees

• Design Kit: CPFC Optoelectronic/Photonic III-V Process
• Epi-Structure Form

The cost is highly structural dependent. Please contact zhang@cmc.ca.

STM 28 nm CMOS FDSOI

Product Page

• 1.0 V/1.8 V
• 1P8M
• no mimcap
• LVT

• Design Kit: STM 28 nm FD SOI CMOS – CMOS28FDSOI
• Design Kit: STM 28 nm FD SOI CMOS – CMOS28FDSOI
• Design Kit: STM 28 nm CMOS – CMOS28LP
• Design Methodology: ST 28 nm FD-SOI CMOS Technology – Analog Design Flow and Reference Design
• Design Methodology: STMicroelectronics 28nm FD-SOI CMOS Technology Digital/Mixed-Mode Design Flow

$12,500/mm²
(Minimum charge is for a 1.25 mm² design)

$5,000/mm²
$2,000/mm
(Minimum charge is for a 1.25 mm² design)

Teledyne DALSA MIDIS Platform

Product Page

• Getter-free high-vacuum sealing allows resonator Q factors > 20,000
• Efficient wafer-level packaging minimizes overall die size
• 1.5-μm feature size in a 30-μm thick membrane
• Comb height control allows out-of-plane sensing
• TSV allows compact design ready for co-packaging
• Deliver 40 copies for each design
• Sealed-cavity MEMS
• 30-μm structure layer
• High-vacuum

Teledyne DALSA MIDIS Design Kits

$9,800
(per 4 x 4 mm² design) 

$4,250
$1,000
(per 4 x 4 mm² design) 

Teledyne Micralyne MicraGEM-Si™ MEMS Process

Product Page

• Two thick SOI structure layers with up to three functional levels of silicon thickness option. This enables structures such as vertical comb-drive actuators.
• Base and top device layers are electrically connected through the bond interface, allowing 3D routing of electrical signals.
• Patterned low-stress gold metallization on the top surface is suited for highly reflective mirrors and contact pads for gold wire bonding.
• Available in sizes 4 mm x 4 mm, 4 mm x 8 mm, and 8 mm x 8 mm
• SOI MEMS
• Two structure layers
• Three trench depths

• Design Kit: Micralyne MicraGEM-Si™, for Tanner L-Edit
• Design Handbook: Micralyne MicraGEM-Si™ (ICI-319)

Contact fab@cmc.ca.

TSMC 0.13 μm CMOS

Product Page

• 1.2 V/3.3 V
• 1P8M
• mimcap

Design Kit: TSMC 0.13 µm CMOS

$2,050/mm²

$1,025/mm²
$100/mm²

TSMC 0.18 μm CMOS

Product Page

• 1.8 V/3.3 V
• 1P6M
• mimcap
• LVT/native/HVT

• Design Kit: TSMC 0.18µm CMOS Process
• Design Methodology Kit: Cadence Analog/Mixed Signal (AMS) Design Flows
• Design Library: ARM Digital Standard Cell and IO Libraries for TSMC 0.18 µm CMOS
• Design Library: TSMC 0.18 µm CMOS Standard Cells Library – tsmc-cl018g_sc-x_2004q3v1
• Design Flow: Digital IC Design (from RMC)

$1,100/mm²

$425/mm²
$100/mm²

TSMC 0.35 μm CMOS

Product Page

• 3.3 V/5 V
• 2P4M

• Design Kit: TSMC 0.35-micron CMOS-CM0SP35
• Design Kit: TSMC 0.35 µm CMOS Process
• Design Methodology Kit: Cadence Analog/Mixed-Signal (AMS) Design Flows
• Design Flow: Digital IC Design (from RMC)

$1,400/mm²
(Minimum charge is for a 12 mm² design)

$250/mm²
$100/mm²
(Minimum charge is for a 12 mm² design)

TSMC 28 nm CMOS Process Technology

Product Page

• 0.9 V (core)/1.8 V (I/O)
• 1P9M (1P9M_6x1z1u)
• High K – Metal gate

$19,450/mm²

$8,775/mm²
$2,000/mm²

TSMC 65 nm CMOS GP

Product Page

• 1.0 V/2.5 V
• 1P9M
• mim/momcap
• LVT/native/HVT

• Design Library: TSMC 65 nm GP Bond Pad Library – tpbn65v
• Design Library: TSMC 65 nm GP Standard Cell Libraries – tcbn65gplus
• Design Library: TSMC 65 nm GP IO Digital Libraries – tpfn65gpgv2od3
• Design Kit: TSMC 65 nm CMOS GP – CRN65GP

$6,350/mm²

$2,350/mm²
$1,000/mm²

TSMC 65 nm CMOS LP

Product Page

• 1.2 V/2.5 V
• 1P9M
• mim/momcap
• LVT/native/HVT

• Design Library: TSMC 65 nm GP Bond Pad Library – tpbn65v
• Design Library: TSMC 65 nm GP Standard Cell Libraries – tcbn65gplus
• Design Library: TSMC 65 nm GP IO Digital Libraries – tpfn65gpgv2od3
• Design Kit: TSMC 65 nm CMOS GP – CRN65GP

$6,350/mm²

$2,350/mm²
$1,000/mm²

AMS 0.35 μm CMOS – Basic

Product Page

• 3.3 V/5 V
• 2P4M

• Design Kit: AMS 0.35-micron CMOS Process Design Kit
• Design Kit: AMS 0.35-micron CMOS Process Design Kit
• Design Methodology: Digital IC Design Flow
• Design Flow: Analog IC
• Design Methodology Kit: Cadence Analog/Mixed-Signal (AMS) Design Flows
• Design Flow: Digital IC Design (from RMC)

$1,200/mm²

$600/mm²
$100/mm²

AMS 0.35 μm CMOS – High Voltage

Product Page

• 3.3 V/5 V/50 V
• 2P4MH35B4D3kit includes:
  • standard cell
  • IO
  • bondpad

• Design Kit: AMS 0.35-micron CMOS Process Design Kit
• Design Methodology: Digital IC Design Flow
• Design Flow: Analog IC
• Design Methodology Kit: Cadence Analog/Mixed Signal (AMS) Design Flows
• Design Flow: Digital IC Design (from RMC)

$2,100/mm²

$600/mm²
$100/mm²

AMS 0.35 μm CMOS – Opto

Product Page

• 3.3 V/5 V
• 2P4M
• anti-reflective coating

• Design Kit: AMS 0.35-micron CMOS Process Design Kit
• Design Methodology: Digital IC Design Flow
• Design Flow: Analog IC
• Design Methodology Kit: Cadence Analog/Mixed-Signal (AMS) Design Flows
• Design Flow: Digital IC Design (from RMC)

$1,975/mm²

$600/mm²
$100/mm²

GLOBALFOUNDRIES 130nm BiCMOS SiGe 8HP

Product Page

Due to low-demand, Global Foundries will no longer be offering this technology.  As an alternate technology, please consider the higher-performance 8XP flavour.

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

GLOBALFOUNDRIES 22FDX FDSOI 22nm Process

Product Page

• 0.4 V to 0.8 V nominal core voltage
• 1.2 V / 1.5 V / 1.8 V IO options
• Four core device Vt’s (FBB, RBB & eLVT)
• RF BEOL /w ultra thick metal stacks
• APMOM capacitor

• GF22FDX-EXT

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

GLOBALFOUNDRIES 45nm RFSOI

Product Page

• 1 V/1.5 V/1.8 V
• 1P8M process
• Native/HVT/SVT/UVT FETs
• N+ silicide resistor
• Vertical natural capacitor
• BEOL inductors
• Thin oxide Varactor
• ft/fmax 290/410 GHz

• 45RFSOI-RF V1.2_0.2

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

GLOBALFOUNDRIES 90nm BiCMOS SiGe 9HP

Product Page

• 1.2 V/1.8 V/2.5 V/3.3 V 
• 1P10M process 
• Native/HVT FETs 
• ft/fmax 310/370GHz 
• Twin_ or triple_well (NFET in isolated pwell) CMOS technology 
• MIM/Dual/high Q MIM capcitors 
• Series/Parallel spirals Inductors 
• PIN / Schottky Barrier diode 

• 90HPSIGE-9HP  V1.3_0.0

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

GLOBALFOUNDRIES SiGe 8XP BiCMOS 130nm

Product Page

• 2 V/2.5 V Core voltage
• 5 V/3.3 V IO voltage
• 5 metal base stack, with the option to 8 levels of metallization
• High performance enhanced FET
• Ft/fmax 250/340 GHz
• MIM and Dual MIM
• Regular Vt and Triple well FET options
• Series/Parallel spirals Inductors
• µm/mm wave passive components
• Thin/Thick dual gate oxide

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

STM 28 nm CMOS FDSOI

Product Page

• 1.0 V/1.8 V
• 1P8M
• no mimcap
• LVT

• Design Kit: STM 28 nm FD SOI CMOS – CMOS28FDSOI
• Design Kit: STM 28 nm FD SOI CMOS – CMOS28FDSOI
• Design Kit: STM 28 nm CMOS – CMOS28LP
• Design Methodology: ST 28 nm FD-SOI CMOS Technology – Analog Design Flow and Reference Design
• Design Methodology: STMicroelectronics 28nm FD-SOI CMOS Technology Digital/Mixed-Mode Design Flow

$12,500/mm²
(Minimum charge is for a 1.25 mm² design)

$5,000/mm²
$2,000/mm
(Minimum charge is for a 1.25 mm² design)

TSMC 0.13 μm CMOS

Product Page

• 1.2 V/3.3 V
• 1P8M
• mimcap

Design Kit: TSMC 0.13 µm CMOS

$2,050/mm²

$1,025/mm²
$100/mm²

TSMC 0.18 μm CMOS

Product Page

• 1.8 V/3.3 V
• 1P6M
• mimcap
• LVT/native/HVT

• Design Kit: TSMC 0.18µm CMOS Process
• Design Methodology Kit: Cadence Analog/Mixed Signal (AMS) Design Flows
• Design Library: ARM Digital Standard Cell and IO Libraries for TSMC 0.18 µm CMOS
• Design Library: TSMC 0.18 µm CMOS Standard Cells Library – tsmc-cl018g_sc-x_2004q3v1
• Design Flow: Digital IC Design (from RMC)

$1,100/mm²

$425/mm²
$100/mm²

TSMC 0.35 μm CMOS

Product Page

• 3.3 V/5 V
• 2P4M

• Design Kit: TSMC 0.35-micron CMOS-CM0SP35
• Design Kit: TSMC 0.35 µm CMOS Process
• Design Methodology Kit: Cadence Analog/Mixed-Signal (AMS) Design Flows
• Design Flow: Digital IC Design (from RMC)

$1,400/mm²
(Minimum charge is for a 12 mm² design)

$250/mm²
$100/mm²
(Minimum charge is for a 12 mm² design)

TSMC 28 nm CMOS Process Technology

Product Page

• 0.9 V (core)/1.8 V (I/O)
• 1P9M (1P9M_6x1z1u)
• High K – Metal gate

$19,450/mm²

$8,775/mm²
$2,000/mm²

TSMC 65 nm CMOS GP

Product Page

• 1.0 V/2.5 V
• 1P9M
• mim/momcap
• LVT/native/HVT

• Design Library: TSMC 65 nm GP Bond Pad Library – tpbn65v
• Design Library: TSMC 65 nm GP Standard Cell Libraries – tcbn65gplus
• Design Library: TSMC 65 nm GP IO Digital Libraries – tpfn65gpgv2od3
• Design Kit: TSMC 65 nm CMOS GP – CRN65GP

$6,350/mm²

$2,350/mm²
$1,000/mm²

TSMC 65 nm CMOS LP

Product Page

• 1.2 V/2.5 V
• 1P9M
• mim/momcap
• LVT/native/HVT

• Design Library: TSMC 65 nm GP Bond Pad Library – tpbn65v
• Design Library: TSMC 65 nm GP Standard Cell Libraries – tcbn65gplus
• Design Library: TSMC 65 nm GP IO Digital Libraries – tpfn65gpgv2od3
• Design Kit: TSMC 65 nm CMOS GP – CRN65GP

$6,350/mm²

$2,350/mm²
$1,000/mm²

Silicon Photonics General-Purpose

Product Page

• SOI, 220 nm top Si, 2000 nm BOX
• 193 nm lithography for waveguides
• 6 implants for optical modulators
• Ge deposition & implanting for photodetectors
• Two metal levels for routing plus metal heater

• Design Kit: Mentor Graphics L-Edit Photonics for the Advanced Micro Foundry (AMF) Silicon Photonics Fabrication Process
• Design Kit: Luceda-Tanner-AMF Silicon Photonics Design Platform
• Design Kit: Mentor Graphics Pyxis for the Advanced Micro Foundry (AMF) Silicon Photonics Fabrication Process

$14,000
(Per 3 x 8 mm design)

$5,400
$1,000
(Per 3 x 8 mm design)

GLOBALFOUNDRIES 90nm CMOS-photonics 9WG

Product Page

• SOI substrate
• Far-BEOL V-groove for fibre attach
• 1P7M
• LVT

Pricing will be provided under a 3-way NDA. The minimum block size is 5 x 2.455 mm per design. Contact fab@cmc.ca.

III-V Epitaxy on GaAs Substrates, InP and Ge Substrates

Product Page

• Provide III – V materials to fabricate
• Lasers, LEDs and SOAs on InP substrate
• VCSELs, nonlinear optics and high-mobility devices on GaAs substrate
• Multi-junction solar cells and converters on Ge substrate
• MOCVD epitaxy of InGaAs, InGaAsP and InAlGaAs lattice-matched and strained MQW and Quantum Dot materials on 3” InP substrate
• MBE epitaxy of high purity InGaAs, InAlAs and InP material on 2” InP substrate
• MOCVD epitaxy of InGaAs, AlGaAs, InAlGaAs lattice-matched and strained MQW materials on 3” and 4” GaAs substrates
• MBE epitaxy of high purity GaAs, AlGaAs, and exotic alloys on 3” GaAs substrate
• MOCVD epitaxy of GaAs, AlGaAs, AlInP, InGaP, InGaAs and AlInGaAs on 6” Ge substrate
• Wafer deliverables will go with the standard metrologies of photoluminescence (PL) and x-ray diffraction
• Other epitaxy metrologies are available with additional fees

• Design Kit: CPFC Optoelectronic/Photonic III-V Process
• Epi-Structure Form

The cost is highly structural dependent. Please contact zhang@cmc.ca.

MEMSCAP PiezoMUMPs

Product Page

• SOI MEMS
• 25um structure layer
• piezoelectric metal

• Design Kit: PiezoMUMPs for Coventorware
• Design Kit: MEMSCAP PiezoMUMPs Design Handbook

$2,325
(per 4.3 x 4.3 mm design) 

$550
$100
(per 4.3 x 4.3 mm design)

MEMSCAP PolyMUMPs Multi-User MEMS Process Technology

Product Page

• Surface MEMS
• Three structure layers

• Design Kit: PolyMUMPs MEMS Process for MEMSPro V7.0
• Design Kit: PolyMUMPs Design Handbook for MEMSPro
• Design Kit: PolyMUMPs MEMS Process for CoventorWare

$2,325
(per 5 x 5 mm² design) 

$550
$100
(per 5 x 5 mm² design) 

MEMSCAP Post-Processing for PolyMUMPs

Product Page

• Optional HF release and supercritical carbon dioxide drying.
• Allows users to develop acoustics, motion sensors, optical MEMS, etc.

• Design Kit: PolyMUMPs MEMS Process for MEMSPro V7.0
• Design Kit: PolyMUMPs Design Handbook for MEMSPro

$825
(per 4.75 x 4.75 mm design)

$325
$100
(per 4.75 x 4.75 mm design)

Teledyne DALSA MIDIS Platform

Product Page

• Getter-free high-vacuum sealing allows resonator Q factors > 20,000
• Efficient wafer-level packaging minimizes overall die size
• 1.5-μm feature size in a 30-μm thick membrane
• Comb height control allows out-of-plane sensing
• TSV allows compact design ready for co-packaging
• Deliver 40 copies for each design
• Sealed-cavity MEMS
• 30-μm structure layer
• High-vacuum

Teledyne DALSA MIDIS Design Kits

$9,800
(per 4 x 4 mm² design) 

$4,250
$1,000
(per 4 x 4 mm² design) 

Teledyne Micralyne MicraGEM-Si™ MEMS Process

Product Page

• Two thick SOI structure layers with up to three functional levels of silicon thickness option. This enables structures such as vertical comb-drive actuators.
• Base and top device layers are electrically connected through the bond interface, allowing 3D routing of electrical signals.
• Patterned low-stress gold metallization on the top surface is suited for highly reflective mirrors and contact pads for gold wire bonding.
• Available in sizes 4 mm x 4 mm, 4 mm x 8 mm, and 8 mm x 8 mm
• SOI MEMS
• Two structure layers
• Three trench depths

• Design Kit: Micralyne MicraGEM-Si™, for Tanner L-Edit
• Design Handbook: Micralyne MicraGEM-Si™ (ICI-319)

Contact fab@cmc.ca.

Open-Gate Silicon JFET

Product Page

• Silicon junction field effect transistors with unpassivated gate, enabling user-deposition of sensor material
• 1 metal routing layer, silicon substrate
• Up to 10 copies per design (10 x 10 mm).  Available as bare die or packaged parts

Design Kit: Open-Gate Silicon JFET (OG Si-JFET) in L-Edit and Synopsys Sentaurus

$3,025
(Per 10 x 10 mm² design)

$1,000
(Per 10 x 10 mm² design)