FAB

Available Technologies

Through supplier partnerships, we offer multi-project wafer services and related fabrication services in a variety of technologies. View our fabrication schedule online.

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All prototyping technologies remain open for international academic research and industrial R&D. For MPW Quotes, contact fab@cmc.ca. For Dedicated/High-Volume Run Quotes, contact sales@cmc.ca.

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Microelectronics

Photonics/Optoelectronics

MEMS

Experimental/Emerging Technologies

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Process Name	Features	Design Kit	Subscribers	Subscribers Peer Reviewed	NEW
STM 28 nm CMOS FDSOI Product Page	1.0 V/1.8 V 1P8M no mimcap LVT	Design Kit: STM 28 nm FD SOI CMOS – CMOS28FDSOI Design Kit: STM 28 nm FD SOI CMOS – CMOS28FDSOI Design Kit: STM 28 nm CMOS – CMOS28LP Design Methodology: ST 28 nm FD-SOI CMOS Technology – Analog Design Flow and Reference Design Design Methodology: STMicroelectronics 28nm FD-SOI CMOS Technology Digital/Mixed-Mode Design Flow	$12,500/mm² (Minimum charge is for a 1.25 mm² design)	~~$5,000/mm~~²(Minimum charge is for a 1.25 mm² design)	$2,000/mm²(Minimum charge is for a 1.25 mm² design)
TSMC 28 nm CMOS Process Technology Product Page	0.9 V (core)/1.8 V (I/O) 1P9M (1P9M_6x1z1u) High K – Metal gate		$19,450/mm²	~~$8,775/mm²~~	$2,000/mm²
TSMC 65 nm CMOS GP Product Page	1.0 V/2.5 V 1P9M mim/momcap LVT/native/HVT	Design Library: TSMC 65 nm GP Bond Pad Library – tpbn65v Design Library: TSMC 65 nm GP Standard Cell Libraries – tcbn65gplus Design Library: TSMC 65 nm GP IO Digital Libraries – tpfn65gpgv2od3 Design Kit: TSMC 65 nm CMOS GP – CRN65GP	$6,350/mm²	~~$2,350/mm²~~	$1,000/mm²
TSMC 0.13 μm CMOS Product Page	1.2 V/3.3 V 1P8M mimcap	Design Kit: TSMC 0.13 µm CMOS	$2,050/mm²	~~$1,025/mm²~~	$100/mm²
TSMC 65 nm CMOS LP Product Page	1.2 V/2.5 V 1P9M mim/momcap LVT/native/HVT	Design Library: TSMC 65 nm GP Bond Pad Library – tpbn65v Design Library: TSMC 65 nm GP Standard Cell Libraries – tcbn65gplus Design Library: TSMC 65 nm GP IO Digital Libraries – tpfn65gpgv2od3 Design Kit: TSMC 65 nm CMOS GP – CRN65GP	$6,350/mm²	~~$2,350/mm²~~	$1,000/mm²
TSMC 0.18 μm CMOS Product Page	1.8 V/3.3 V 1P6M mimcap LVT/native/HVT	Design Kit: TSMC 0.18µm CMOS Process Design Methodology Kit: Cadence Analog/Mixed Signal (AMS) Design Flows Design Library: ARM Digital Standard Cell and IO Libraries for TSMC 0.18 µm CMOS Design Library: TSMC 0.18 µm CMOS Standard Cells Library – tsmc-cl018g_sc-x_2004q3v1 Design Flow: Digital IC Design (from RMC)	$1,100/mm²	~~$425/mm²~~	$100/mm²
TSMC 0.35 μm CMOS Product Page	3.3 V/5 V 2P4M	Design Kit: TSMC 0.35-micron CMOS-CM0SP35 Design Kit: TSMC 0.35 µm CMOS Process Design Methodology Kit: Cadence Analog/Mixed-Signal (AMS) Design Flows Design Flow: Digital IC Design (from RMC)	$1,400/mm² (Minimum charge is for a 12 mm² design)	~~$250/mm²~~ (Minimum charge is for a 12 mm² design)	$100/mm² (Minimum charge is for a 12 mm² design)
AMS 0.35 μm CMOS – Basic Product Page	3.3 V/5 V 2P4M	Design Kit: AMS 0.35-micron CMOS Process Design Kit Design Kit: AMS 0.35-micron CMOS Process Design Kit Design Methodology: Digital IC Design Flow Design Flow: Analog IC Design Methodology Kit: Cadence Analog/Mixed-Signal (AMS) Design Flows Design Flow: Digital IC Design (from RMC)	$1,200/mm²	~~$600/mm²~~	$100/mm²
AMS 0.35 μm CMOS – Opto Product Page	3.3 V/5 V 2P4M anti-reflective coating	Design Kit: AMS 0.35-micron CMOS Process Design Kit Design Methodology: Digital IC Design Flow Design Flow: Analog IC Design Methodology Kit: Cadence Analog/Mixed-Signal (AMS) Design Flows Design Flow: Digital IC Design (from RMC)	$1,975/mm²	~~$600/mm²~~	$100/mm²
AMS 0.35 μm CMOS – High Voltage Product Page	3.3 V/5 V/50 V 2P4MH35B4D3kit includes: standard cell IO bondpad	Design Kit: AMS 0.35-micron CMOS Process Design Kit Design Methodology: Digital IC Design Flow Design Flow: Analog IC Design Methodology Kit: Cadence Analog/Mixed Signal (AMS) Design Flows Design Flow: Digital IC Design (from RMC)	$2,100/mm²	~~$600/mm²~~	$100/mm²
Open-Gate Silicon JFET Product Page	JFET with no top gate, enabling user-deposition of sensor material 4-mask process on epitaxial Si with 5 µm feature size Front- and back-side Boron ion implantation One metal routing layer Gold pad metallization (compatible with wirebonding) SiN passivation Aluminum bottom gate	Design Kit: Open-Gate Silicon JFET (OG Si-JFET) in L-Edit and Synopsys Sentaurus	$3,025 (Per 10 x 10 mm² design)	$1,000 (Per 10 x 10 mm² design)
Silicon Photonics General-Purpose Product Page	SOI, 220 nm top Si, 2000 nm BOX 193 nm lithography for waveguides 6 implants for optical modulators Ge deposition & implanting for photodetectors Two metal levels for routing plus metal heater	Design Kit: Mentor Graphics L-Edit Photonics for the Advanced Micro Foundry (AMF) Silicon Photonics Fabrication Process Design Kit: Luceda-Tanner-AMF Silicon Photonics Design Platform Design Kit: Mentor Graphics Pyxis for the Advanced Micro Foundry (AMF) Silicon Photonics Fabrication Process	$14,000 (Per 3 x 8 mm² design)	~~$5,400~~ (Per 3 x 8 mm² design)	$1,000 (Per 3 x 8 mm² design)
GLOBALFOUNDRIES 22FDX FDSOI 22nm Process Product Page	0.4 V to 0.8 V nominal core voltage 1.2 V / 1.5 V / 1.8 V IO options Four core device Vt’s (FBB, RBB & eLVT) RF BEOL /w ultra thick metal stacks APMOM capacitor	GF22FDX-EXT	Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.
GLOBALFOUNDRIES 45nm RFSOI Product Page	1 V/1.5 V/1.8 V 1P8M process Native/HVT/SVT/UVT FETs N+ silicide resistor Vertical natural capacitor BEOL inductors Thin oxide Varactor ft/fmax 290/410 GHz	45RFSOI-RF V1.2_0.2	Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.
GLOBALFOUNDRIES 90nm BiCMOS SiGe 9HP Product Page	1.2 V/1.8 V/2.5 V/3.3 V 1P10M process Native/HVT FETs ft/fmax 310/370GHz Twin_ or triple_well (NFET in isolated pwell) CMOS technology MIM/Dual/high Q MIM capcitors Series/Parallel spirals Inductors PIN / Schottky Barrier diode	90HPSIGE-9HP V1.3_0.0	Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.
GLOBALFOUNDRIES SiGe 8XP BiCMOS 130nm Product Page	2 V/2.5 V Core voltage 5 V/3.3 V IO voltage 5 metal base stack, with the option to 8 levels of metallization High performance enhanced FET Ft/fmax 250/340 GHz MIM and Dual MIM Regular Vt and Triple well FET options Series/Parallel spirals Inductors µm/mm wave passive components Thin/Thick dual gate oxide		Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.
GLOBALFOUNDRIES 130nm BiCMOS SiGe 8HP Product Page	Due to low-demand, Global Foundries will no longer be offering this technology. As an alternate technology, please consider the higher-performance 8XP flavour.		Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.
GLOBALFOUNDRIES 90nm CMOS-photonics 9WG Product Page	SOI substrate Far-BEOL V-groove for fibre attach 1P7M LVT		Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.
III-V Epitaxy on GaAs Substrates, InP and Ge Substrates Product Page	Provide III – V materials to fabricate Lasers, LEDs and SOAs on InP substrate VCSELs, nonlinear optics and high-mobility devices on GaAs substrate Multi-junction solar cells and converters on Ge substrate MOCVD epitaxy of InGaAs, InGaAsP and InAlGaAs lattice-matched and strained MQW and Quantum Dot materials on 3” InP substrate MBE epitaxy of high purity InGaAs, InAlAs and InP material on 2” InP substrate MOCVD epitaxy of InGaAs, AlGaAs, InAlGaAs lattice-matched and strained MQW materials on 3” and 4” GaAs substrates MBE epitaxy of high purity GaAs, AlGaAs, and exotic alloys on 3” GaAs substrate MOCVD epitaxy of GaAs, AlGaAs, AlInP, InGaP, InGaAs and AlInGaAs on 6” Ge substrate Wafer deliverables will go with the standard metrologies of photoluminescence (PL) and x-ray diffraction Other epitaxy metrologies are available with additional fees	Design Kit: CPFC Optoelectronic/Photonic III-V Process Epi-Structure Form	The cost is highly structural dependent. Please contact zhang@cmc.ca.
MEMSCAP PiezoMUMPs Product Page	SOI MEMS 25um structure layer piezoelectric metal	Design Kit: PiezoMUMPs for Coventorware Design Kit: MEMSCAP PiezoMUMPs Design Handbook	$2,325 (per 5 x 5 mm² design)	~~$550~~ (per 5 x 5 mm² design)	$100 (per 5 x 5 mm² design)
MEMSCAP PolyMUMPs Multi-User MEMS Process Technology Product Page	Surface MEMS Three structure layers	Design Kit: PolyMUMPs MEMS Process for MEMSPro V7.0 Design Kit: PolyMUMPs Design Handbook for MEMSPro Design Kit: PolyMUMPs MEMS Process for CoventorWare	$2,325 (per 5 x 5 mm² design)	~~$550~~ (per 5 x 5 mm² design)	$100 (per 5 x 5 mm² design)
MEMSCAP Post-Processing for PolyMUMPs Product Page		Design Kit: PolyMUMPs MEMS Process for MEMSPro V7.0 Design Kit: PolyMUMPs Design Handbook for MEMSPro	$825/design	~~$325~~ (per design)	$100 (per design)
Teledyne DALSA MIDIS Platform Product Page	Getter-free high-vacuum sealing allows resonator Q factors > 20,000 Efficient wafer-level packaging minimizes overall die size 1.5-μm feature size in a 30-μm thick membrane Comb height control allows out-of-plane sensing TSV allows compact design ready for co-packaging Deliver 40 copies for each design Sealed-cavity MEMS 30-μm structure layer High-vacuum	Teledyne DALSA MIDIS Design Kits	$9,800 (per 4 x 4 mm² design)	~~$4,250~~ (per 4 x 4 mm² design)	$1,000 (per 4 x 4 mm² design)
MicraGEM-Si™ MEMS Process Product Page	Two thick SOI structure layers with up to three functional levels of silicon thickness option. This enables structures such as vertical comb-drive actuators. Base and top device layers are electrically connected through the bond interface, allowing 3D routing of electrical signals. Patterned low-stress gold metallization on the top surface is suited for highly reflective mirrors and contact pads for gold wire bonding. Available in sizes 4 mm x 4 mm, 4 mm x 8 mm, and 8 mm x 8 mm SOI MEMS Two structure layers Three trench depths	Design Kit: Micralyne MicraGEM-Si™, for Tanner L-Edit Design Handbook: Micralyne MicraGEM-Si™ (ICI-319)	Contact fab@cmc.ca.

Microelectronics

Process Name	Features	Design Kit	Subscribers	Subscribers Peer Reviewed	NEW
STM 28 nm CMOS FDSOI Product Page	1.0 V/1.8 V 1P8M no mimcap LVT	Design Kit: STM 28 nm FD SOI CMOS – CMOS28FDSOI Design Kit: STM 28 nm FD SOI CMOS – CMOS28FDSOI Design Kit: STM 28 nm CMOS – CMOS28LP Design Methodology: ST 28 nm FD-SOI CMOS Technology – Analog Design Flow and Reference Design Design Methodology: STMicroelectronics 28nm FD-SOI CMOS Technology Digital/Mixed-Mode Design Flow	$12,500/mm² (Minimum charge is for a 1.25 mm² design)	~~$5,000/mm~~²(Minimum charge is for a 1.25 mm² design)	$2,000/mm²(Minimum charge is for a 1.25 mm² design)
TSMC 28 nm CMOS Process Technology Product Page	0.9 V (core)/1.8 V (I/O) 1P9M (1P9M_6x1z1u) High K – Metal gate		$19,450/mm²	~~$8,775/mm²~~	$2,000/mm²
TSMC 65 nm CMOS GP Product Page	1.0 V/2.5 V 1P9M mim/momcap LVT/native/HVT	Design Library: TSMC 65 nm GP Bond Pad Library – tpbn65v Design Library: TSMC 65 nm GP Standard Cell Libraries – tcbn65gplus Design Library: TSMC 65 nm GP IO Digital Libraries – tpfn65gpgv2od3 Design Kit: TSMC 65 nm CMOS GP – CRN65GP	$6,350/mm²	~~$2,350/mm²~~	$1,000/mm²
TSMC 0.13 μm CMOS Product Page	1.2 V/3.3 V 1P8M mimcap	Design Kit: TSMC 0.13 µm CMOS	$2,050/mm²	~~$1,025/mm²~~	$100/mm²
TSMC 65 nm CMOS LP Product Page	1.2 V/2.5 V 1P9M mim/momcap LVT/native/HVT	Design Library: TSMC 65 nm GP Bond Pad Library – tpbn65v Design Library: TSMC 65 nm GP Standard Cell Libraries – tcbn65gplus Design Library: TSMC 65 nm GP IO Digital Libraries – tpfn65gpgv2od3 Design Kit: TSMC 65 nm CMOS GP – CRN65GP	$6,350/mm²	~~$2,350/mm²~~	$1,000/mm²
TSMC 0.18 μm CMOS Product Page	1.8 V/3.3 V 1P6M mimcap LVT/native/HVT	Design Kit: TSMC 0.18µm CMOS Process Design Methodology Kit: Cadence Analog/Mixed Signal (AMS) Design Flows Design Library: ARM Digital Standard Cell and IO Libraries for TSMC 0.18 µm CMOS Design Library: TSMC 0.18 µm CMOS Standard Cells Library – tsmc-cl018g_sc-x_2004q3v1 Design Flow: Digital IC Design (from RMC)	$1,100/mm²	~~$425/mm²~~	$100/mm²
TSMC 0.35 μm CMOS Product Page	3.3 V/5 V 2P4M	Design Kit: TSMC 0.35-micron CMOS-CM0SP35 Design Kit: TSMC 0.35 µm CMOS Process Design Methodology Kit: Cadence Analog/Mixed-Signal (AMS) Design Flows Design Flow: Digital IC Design (from RMC)	$1,400/mm² (Minimum charge is for a 12 mm² design)	~~$250/mm²~~ (Minimum charge is for a 12 mm² design)	$100/mm² (Minimum charge is for a 12 mm² design)
AMS 0.35 μm CMOS – Basic Product Page	3.3 V/5 V 2P4M	Design Kit: AMS 0.35-micron CMOS Process Design Kit Design Kit: AMS 0.35-micron CMOS Process Design Kit Design Methodology: Digital IC Design Flow Design Flow: Analog IC Design Methodology Kit: Cadence Analog/Mixed-Signal (AMS) Design Flows Design Flow: Digital IC Design (from RMC)	$1,200/mm²	~~$600/mm²~~	$100/mm²
AMS 0.35 μm CMOS – Opto Product Page	3.3 V/5 V 2P4M anti-reflective coating	Design Kit: AMS 0.35-micron CMOS Process Design Kit Design Methodology: Digital IC Design Flow Design Flow: Analog IC Design Methodology Kit: Cadence Analog/Mixed-Signal (AMS) Design Flows Design Flow: Digital IC Design (from RMC)	$1,975/mm²	~~$600/mm²~~	$100/mm²
AMS 0.35 μm CMOS – High Voltage Product Page	3.3 V/5 V/50 V 2P4MH35B4D3kit includes: standard cell IO bondpad	Design Kit: AMS 0.35-micron CMOS Process Design Kit Design Methodology: Digital IC Design Flow Design Flow: Analog IC Design Methodology Kit: Cadence Analog/Mixed Signal (AMS) Design Flows Design Flow: Digital IC Design (from RMC)	$2,100/mm²	~~$600/mm²~~	$100/mm²
GLOBALFOUNDRIES 22FDX FDSOI 22nm Process Product Page	0.4 V to 0.8 V nominal core voltage 1.2 V / 1.5 V / 1.8 V IO options Four core device Vt’s (FBB, RBB & eLVT) RF BEOL /w ultra thick metal stacks APMOM capacitor	GF22FDX-EXT	Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.
GLOBALFOUNDRIES 45nm RFSOI Product Page	1 V/1.5 V/1.8 V 1P8M process Native/HVT/SVT/UVT FETs N+ silicide resistor Vertical natural capacitor BEOL inductors Thin oxide Varactor ft/fmax 290/410 GHz	45RFSOI-RF V1.2_0.2	Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.
GLOBALFOUNDRIES 90nm BiCMOS SiGe 9HP Product Page	1.2 V/1.8 V/2.5 V/3.3 V 1P10M process Native/HVT FETs ft/fmax 310/370GHz Twin_ or triple_well (NFET in isolated pwell) CMOS technology MIM/Dual/high Q MIM capcitors Series/Parallel spirals Inductors PIN / Schottky Barrier diode	90HPSIGE-9HP V1.3_0.0	Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.
GLOBALFOUNDRIES SiGe 8XP BiCMOS 130nm Product Page	2 V/2.5 V Core voltage 5 V/3.3 V IO voltage 5 metal base stack, with the option to 8 levels of metallization High performance enhanced FET Ft/fmax 250/340 GHz MIM and Dual MIM Regular Vt and Triple well FET options Series/Parallel spirals Inductors µm/mm wave passive components Thin/Thick dual gate oxide		Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.
GLOBALFOUNDRIES 130nm BiCMOS SiGe 8HP Product Page	Due to low-demand, Global Foundries will no longer be offering this technology. As an alternate technology, please consider the higher-performance 8XP flavour.		Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

Photonics/Optoelectronics

Process Name	Features	Design Kit	Subscribers	Subscribers Peer Reviewed	NEW
Silicon Photonics General-Purpose Product Page	SOI, 220 nm top Si, 2000 nm BOX 193 nm lithography for waveguides 6 implants for optical modulators Ge deposition & implanting for photodetectors Two metal levels for routing plus metal heater	Design Kit: Mentor Graphics L-Edit Photonics for the Advanced Micro Foundry (AMF) Silicon Photonics Fabrication Process Design Kit: Luceda-Tanner-AMF Silicon Photonics Design Platform Design Kit: Mentor Graphics Pyxis for the Advanced Micro Foundry (AMF) Silicon Photonics Fabrication Process	$14,000 (Per 3 x 8 mm² design)	~~$5,400~~ (Per 3 x 8 mm² design)	$1,000 (Per 3 x 8 mm² design)
GLOBALFOUNDRIES 90nm CMOS-photonics 9WG Product Page	SOI substrate Far-BEOL V-groove for fibre attach 1P7M LVT		Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.
III-V Epitaxy on GaAs Substrates, InP and Ge Substrates Product Page	Provide III – V materials to fabricate Lasers, LEDs and SOAs on InP substrate VCSELs, nonlinear optics and high-mobility devices on GaAs substrate Multi-junction solar cells and converters on Ge substrate MOCVD epitaxy of InGaAs, InGaAsP and InAlGaAs lattice-matched and strained MQW and Quantum Dot materials on 3” InP substrate MBE epitaxy of high purity InGaAs, InAlAs and InP material on 2” InP substrate MOCVD epitaxy of InGaAs, AlGaAs, InAlGaAs lattice-matched and strained MQW materials on 3” and 4” GaAs substrates MBE epitaxy of high purity GaAs, AlGaAs, and exotic alloys on 3” GaAs substrate MOCVD epitaxy of GaAs, AlGaAs, AlInP, InGaP, InGaAs and AlInGaAs on 6” Ge substrate Wafer deliverables will go with the standard metrologies of photoluminescence (PL) and x-ray diffraction Other epitaxy metrologies are available with additional fees	Design Kit: CPFC Optoelectronic/Photonic III-V Process Epi-Structure Form	The cost is highly structural dependent. Please contact zhang@cmc.ca.

MEMS

Process Name	Features	Design Kit	Subscribers	Subscribers Peer Reviewed	NEW
MEMSCAP PiezoMUMPs Product Page	SOI MEMS 25um structure layer piezoelectric metal	Design Kit: PiezoMUMPs for Coventorware Design Kit: MEMSCAP PiezoMUMPs Design Handbook	$2,325 (per 5 x 5 mm² design)	~~$550~~ (per 5 x 5 mm² design)	$100 (per 5 x 5 mm² design)
MEMSCAP PolyMUMPs Multi-User MEMS Process Technology Product Page	Surface MEMS Three structure layers	Design Kit: PolyMUMPs MEMS Process for MEMSPro V7.0 Design Kit: PolyMUMPs Design Handbook for MEMSPro Design Kit: PolyMUMPs MEMS Process for CoventorWare	$2,325 (per 5 x 5 mm² design)	~~$550~~ (per 5 x 5 mm² design)	$100 (per 5 x 5 mm² design)
MEMSCAP Post-Processing for PolyMUMPs Product Page		Design Kit: PolyMUMPs MEMS Process for MEMSPro V7.0 Design Kit: PolyMUMPs Design Handbook for MEMSPro	$825/design	~~$325~~ (per design)	$100 (per design)
Teledyne DALSA MIDIS Platform Product Page	Getter-free high-vacuum sealing allows resonator Q factors > 20,000 Efficient wafer-level packaging minimizes overall die size 1.5-μm feature size in a 30-μm thick membrane Comb height control allows out-of-plane sensing TSV allows compact design ready for co-packaging Deliver 40 copies for each design Sealed-cavity MEMS 30-μm structure layer High-vacuum	Teledyne DALSA MIDIS Design Kits	$9,800 (per 4 x 4 mm² design)	~~$4,250~~ (per 4 x 4 mm² design)	$1,000 (per 4 x 4 mm² design)
MicraGEM-Si™ MEMS Process Product Page	Two thick SOI structure layers with up to three functional levels of silicon thickness option. This enables structures such as vertical comb-drive actuators. Base and top device layers are electrically connected through the bond interface, allowing 3D routing of electrical signals. Patterned low-stress gold metallization on the top surface is suited for highly reflective mirrors and contact pads for gold wire bonding. Available in sizes 4 mm x 4 mm, 4 mm x 8 mm, and 8 mm x 8 mm SOI MEMS Two structure layers Three trench depths	Design Kit: Micralyne MicraGEM-Si™, for Tanner L-Edit Design Handbook: Micralyne MicraGEM-Si™ (ICI-319)	Contact fab@cmc.ca.

Experimental/Emerging Technologies

Process Name	Features	Design Kit	Subscribers	Subscribers Peer Reviewed
Open-Gate Silicon JFET Product Page	JFET with no top gate, enabling user-deposition of sensor material 4-mask process on epitaxial Si with 5 µm feature size Front- and back-side Boron ion implantation One metal routing layer Gold pad metallization (compatible with wirebonding) SiN passivation Aluminum bottom gate	Design Kit: Open-Gate Silicon JFET (OG Si-JFET) in L-Edit and Synopsys Sentaurus	$3,025 (Per 10 x 10 mm² design)	$1,000 (Per 10 x 10 mm² design)

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