FAB

Available Technologies

Through supplier partnerships, we offer multi-project wafer services and related fabrication services in a variety of technologies. View our fabrication schedule online.

All prototyping technologies remain open for international academic research and industrial R&D. For MPW Quotes, contact fab@cmc.ca.  For Dedicated/High-Volume Run Quotes, contact sales@cmc.ca.
Process NameFeaturesDesign Kits and LibrariesPrice for SubscribersPrice for Subscribers, Peer ReviewedPrice for Academics outside of Canada or Industry

AMF Silicon Photonics General-Purpose Fabrication Process

amf Advanced Micro Foundry logo with transparent background

  • SOI, 220 nm top Si, 2000 nm BOX
  • 193 nm lithography for waveguides
  • 6 implants for optical modulators
  • Ge deposition & implanting for photodetectors
  • Two metal levels for routing plus metal heater

$14,000
(Per 3 x 8 mm design)

$5,400
$1,000
(Per 3 x 8 mm design)

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
AMF Silicon Photonics, industry, photonics

AMS 0.35 µm CMOS Process Technology (Basic)

 

  • 3.3 V/5 V
  • 2P4M

$1,200/mm2

$600/mm2
$100/mm2

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
AMS, industry, microelectronics

AMS 0.35 µm CMOS Process Technology (High-Voltage)

  • 3.3 V/5 V/50 V
  • 2P4MH35B4D3 kit includes:
    • standard cell
    • IO
    • bondpad

$2,100/mm2

$600/mm2
$100/mm2

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
AMS, industry, microelectronics

AMS 0.35 µm CMOS Process Technology (Opto)

 

  • 3.3 V/5 V
  • 2P4M
  • anti-reflective coating

$1,975/mm2

$600/mm2
$100/mm2

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
AMS, industry, microelectronics

Compound Semiconductor Epitaxy

  • Molecular Beam Epitaxy (MBE)
  • Gas-Source MBE
  • Metal-Organic Chemical Vapor Deposition (MOCVD)

$14,000 
(Per 3 x 8 mm design) 

$1,000 
(Per 3 x 8 mm design)

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
photonics

Electronic Sensor Platform (ESP)

  • Silicon junction field effect transistors with unpassivated gate, enabling user-deposition of sensor material
  • 1 metal routing layer, silicon substrate
  • Up to 10 copies per design (10 x 10 mm).  Available as bare die or packaged parts

$3,025
(Per 10 x 10 mm2 design)

$1,000
$100
(Per 10 x 10 mm2 design)

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
3IT, Emerging, Experimental, MNI, MNI Featured

GLOBALFOUNDRIES 12 LP

  • Logic Voltages → Vnom: 0.8V, Vmax: 0.945V
  • 4 VTs: SLVT / LVT / RVT / HVT
  • IO offering: 1.2 V, 1.35 V, 1.5 V and 1.8 V EG Devices
  • Well resistor, precision MOL resistor, MIM / MIM4 / APMOM / MOS / VNCAP capacitors, ESD, eFuse, VPNP, VNPN and Diodes, Inductors, Transmission line
  • Interlevel Low-K and Ultralow-K dielectrics
  • Packaging options: C4 solder, Round or Oblong Copper Pillar Bump, Micro pillar Bump
  • GF12lp0_4.0
  • Device library
  • RF library
  • ESD library

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

N/A

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
GLOBALFOUNDRIES, microelectronics

GLOBALFOUNDRIES 130 nm BiCMOS SiGe 8HP

Due to low-demand, Global Foundries will no longer be offering this technology.  As an alternate technology, please consider the higher-performance 8XP flavour.

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

N/A

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
GLOBALFOUNDRIES, microelectronics

GLOBALFOUNDRIES 22FDX FDSOI 22 nm

  • 0.4 V to 0.8 V nominal core voltage
  • 1.2 V / 1.5 V / 1.8 V IO options
  • Four core device Vt’s (FBB, RBB & eLVT)
  • RF BEOL /w ultra thick metal stacks
  • APMOM capacitor
  • GF22FDX-EXT

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

N/A

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
GLOBALFOUNDRIES, industry, microelectronics

GLOBALFOUNDRIES 45 nm RFSOI

  • 1 V/1.5 V/1.8 V
  • 1P8M process
  • Native/HVT/SVT/UVT FETs
  • N+ silicide resistor
  • Vertical natural capacitor
  • BEOL inductors
  • Thin oxide Varactor
  • ft/fmax 290/410 GHz
  • 45RFSOI-RF V1.2_0.2

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

N/A

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
GLOBALFOUNDRIES, industry, microelectronics

GLOBALFOUNDRIES 90 nm BiCMOS SiGe 9HP

  • 1.2 V/1.8 V/2.5 V/3.3 V 
  • 1P10M process 
  • Native/HVT FETs 
  • ft/fmax 310/370GHz 
  • Twin_ or triple_well (NFET in isolated pwell) CMOS technology 
  • MIM/Dual/high Q MIM capcitors 
  • Series/Parallel spirals Inductors 
  • PIN / Schottky Barrier diode 
  • 90HPSIGE-9HP  V1.3_0.0

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

N/A

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
GLOBALFOUNDRIES, industry, microelectronics

GLOBALFOUNDRIES SiGe 8XP BiCMOS 130 nm

  • 1.2 V/2.5 V Core voltage
  • 2.5 V/3.3 V IO voltage
  • 5 metal base stack, with option to 8 levels of metallization
  • High performance enhanced FET
  • Ft/fmax 250/340 GHz
  • MIM and Dual MIM
  • Regular Vt and Triple well FET options
  • Series/Parallel spirals Inductors
  • µm/mm wave passive components
  • Thin/Thick dual gate oxide

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.

N/A

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
GLOBALFOUNDRIES, industry, microelectronics

GLOBALFOUNDRIES 90 nm CMOS-photonics 9WG

 

  • SOI substrate
  • Far-BEOL V-groove for fibre attach
  • 1P7M
  • LVT

90SIPH-9WG, includes:

  • photonic element library
  • electronic element library
  • bondpad

Pricing will be provided under a 3-way NDA. The minimum block size is 5 x 2.455 mm per design. Contact fab@cmc.ca.

N/A

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
GLOBALFOUNDRIES, industry, photonics, silicon photonics

MEMSCAP PiezoMUMPs Process Technology

  • SOI MEMS
  • 25um structure layer
  • piezoelectric metal

$2,325
(per 4.3 x 4.3 mm design) 

$550
$100
(per 4.3 x 4.3 mm design)

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
MEMS, MEMSCAP

MEMSCAP PolyMUMPs Multi-User MEMS Process Technology

  • Surface MEMS
  • Three structure layers

$2,325
(per 5 x 5 mm2 design) 

$550
$100
(per 5 x 5 mm2 design) 

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
MEMS, MEMSCAP

MEMSCAP Post-Processing for PolyMUMPs

  • Optional HF release and supercritical carbon dioxide drying.
  • Allows users to develop acoustics, motion sensors, optical MEMS, etc.

$825
(per 4.75 x 4.75 mm design)

$325
$100
(per 4.75 x 4.75 mm design)

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
MEMS, MEMSCAP

STM 28 nm FD SOI CMOS

ST Microelectronics logo

  • 1.0 V/1.8 V
  • 1P8M
  • no mimcap
  • LVT

$12,500/mm2
(Minimum charge is for a 1.25 mm2 design)

$5,000/mm2
$2,000/mm
(Minimum charge is for a 1.25 mm2 design)

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
microelectronics, STM

Teledyne DALSA MIDIS Platform

  • Getter-free high-vacuum sealing allows resonator Q factors > 20,000
  • Efficient wafer-level packaging minimizes overall die size
  • 1.5-μm feature size in a 30-μm thick membrane
  • Comb height control allows out-of-plane sensing
  • TSV allows compact design ready for co-packaging
  • Deliver 40 copies for each design
  • Sealed-cavity MEMS
  • 30-μm structure layer
  • High-vacuum

$9,800
(per 4 x 4 mm2 design) 

$4,250
$1,000
(per 4 x 4 mm2 design) 

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
industry, MEMS, Teledyne

Teledyne Micralyne Micralyne MicraGEM-Si™ MEMS Process

Teledyne DALSA logo

  • Two thick SOI structure layers with up to three functional levels of silicon thickness option. This enables structures such as vertical comb-drive actuators.
  • Base and top device layers are electrically connected through the bond interface, allowing 3D routing of electrical signals.
  • Patterned low-stress gold metallization on the top surface is suited for highly reflective mirrors and contact pads for gold wire bonding.
  • Available in sizes 4 mm x 4 mm, 4 mm x 8 mm, and 8 mm x 8 mm
  • SOI MEMS
  • Two structure layers
  • Three trench depths

Contact fab@cmc.ca.

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
MEMS, Teledyne

TSMC 0.13 µm CMOS RF Mixed-Signal Process

  • 1.2 V/3.3 V
  • 1P8M
  • mimcap

$2,050/mm2

$1,025/mm2
$100/mm2

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
microelectronics, TSMC

TSMC 0.18 µm CMOS Process Technology

  • 1.8 V/3.3 V
  • 1P6M
  • mimcap
  • LVT/native/HVT

$1,100/mm2

$425/mm2
$100/mm2

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
microelectronics, TSMC

TSMC 0.35 µm CMOS Process Technology

  • 3.3 V/5 V
  • 2P4M

$1,400/mm2
(Minimum charge is for a 12 mm2 design)

$250/mm2
$100/mm2
(Minimum charge is for a 12 mm2 design)

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
microelectronics, TSMC

TSMC 28 nm CMOS Process Technology (HPC+RF)

  • 0.9 V (core)/1.8 V (I/O)
  • 1P9M (1P9M_6x1z1u)
  • High K – Metal gate
  • Standard cell

$19,450/mm2

$8,775/mm2
$2,000/mm2

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
microelectronics, TSMC

TSMC 65 nm GP CMOS Process Technology

  • 1.0 V/2.5 V
  • 1P9M
  • mim/momcap
  • LVT/native/HVT

$6,350/mm2

$2,350/mm2
$1,000/mm2

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
microelectronics, TSMC

TSMC 65 nm LP CMOS Process Technology

  • 1.2 V/2.5 V
  • 1P9M
  • mim/momcap
  • LVT/native/HVT
  • Design Library: TSMC 65 nm GP Bond Pad Library – tpbn65v
  • Design Kit: TSMC 65 nm CMOS GP – CRN65LP
  • Design Library: TSMC 65 nm LP Standard Cell Libraries – tcbn65lp
  • Design Library: TSMC 65 nm LP IO Digital Libraries – tpdn65lpnv2
  • Design Library: TSMC 65nm LP IO Analog Libraries – tpan65lpnv2

$6,350/mm2

$2,350/mm2
$1,000/mm2

Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.
microelectronics, TSMC

X-FAB: XT018 Automotive 180 nm BCD-on-SOI Technology Platform
 

Coming soon …

Contact fab@cmc.ca.

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