Fabrication foundry
GlobalFoundries’ 130CBIC is a 130 nm complementary Bi-CMOS (CBIC) platform that represents the most advanced silicon–germanium (SiGe) process to date. It features high-performance transistors — specifically, NPN devices with ft/fmax exceeding 400 GHz and PNP devices surpassing 200 GHz enabling superior RF performance for demanding applications. This makes 130CBIC ideally suited for markets such as
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GlobalFoundries’ 130 RFGaN technology is a GaN-on-silicon RF platform built on the company’s mature 130 nm manufacturing infrastructure, enabling the integration of high-efficiency GaN devices with silicon-based control and driver circuitry. By leveraging GaN’s high breakdown voltage, high electron mobility, and superior power density, the 130 RFGaN process targets linear, efficient RF power amplifiers for
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CMC offers access to the GlobalFoundries® (GF) 45 nm RFE which is a partially depleted RF SOI on a high resistivity substrate CMOS technology optimized for radio-frequency front-end and mm-wave applications. This technology offers two gate dielectrics, high voltage support, and low leakage. Three types of nFETs: RVT, ADNFET, and DGADNFET are included for high
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CMC Microsystems offers access to the GlobalFoundries® 55 nm BCDLite (GF55BCDLite) technology, designed for applications requiring Bipolar-CMOS-DMOS (BCD) technology, such as high-performance Power Management ICs (PMICs). This process provides optimized RDS(on) for efficient power delivery and features low-power and high-voltage LDMOS transistors, making it ideal for power-sensitive designs. For more details, please visit the web
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CMC Microsystems offers access to the GlobalFoundries® 28 nm Super Low Power Extended (28SLPe) technology, an ideal process for energy-efficient, mixed-signal, and RF SoC applications. The 28SLPe technology provides best-in-class power efficiency for a wide range of applications. Its optimized 28 nm planar transistor technology enables ultra-low leakage and supports high-density designs for performance and
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The GlobalFoundries® (GF) silicon photonics (SiPh) foundry portfolio is designed to help you deliver more data faster, farther, and more efficiently than traditional CMOS technologies. 45SPCLO, built on a 45 nm SOI platform, enables monolithic integration of RF, analog and Si-Photonic circuits with high efficiency and high data speed. CMC Microsystems offers access to GlobalFoundries technologies
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CMC offers access to the GlobalFoundries® 12 nm FinFET technology. The 12LP technology is targeted for high-performance, power-efficient SoC applications in demanding, high-volume applications. 3D FinFET transistor technology provides best-in-class performance and power with significant cost advantages from 12nm area scaling. FinFET benefits include high drive current and soft error rate reduction vs planar technology. FinFET
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CMC Microsystems offers access to the GlobalFoundries® (GF) 22FDX™ 22 nm Fully-Depleted Silicon-on-Insulator (FD-SOI) process technology platform for low power embedded applications. The 22 nm FD-SOI transistor technology delivers FinFET-like performance with energy-efficiency. The simultaneous high Ft /high Fmax, high self-gain and high current efficiency of 22FDX enables ultra low power analog/RF/mmWave designs. CMC also offers
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CMC Microsystems offers access to the GlobalFoundries® (GF) 130 nm high-performance SiGe BiCMOS technology. This technology is well suited for the design of high-speed, low-noise mixed-signal systems. The silicon-proven solutions enable you to maximize performance, integrate extensive digital and RF functionality and exploit an economical silicon platform. An advanced copper metallization feature enables higher current
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CMC offers access to the GlobalFoundries® (GF) 45 nm RF Silicon on Insulator (SOI) CMOS technology. The GF 45RFSOI technology is targeted for high performance, next-generation mobile communication infrastructure. This technology offers collective benefits of RF-centric features, device stacking, an optimized BEOL and a high-resistivity substrate. The RF centric process enhancements of 45RFSOI build on
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CMC Microsystems offers access to the GlobalFoundries® (GF) 90 nm High-performance SiGe BiCMOS technology. The GF 90 nm high-performance BiCMOS technology is well suited for the design of high-speed logic/mixed-signal systems. The process is configured for 1.2 V/1.8 V/2.5 V/3.3 V high-performance operation at RF frequencies. The technology offers low noise figure, high gain and
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The GlobalFoundries® (GF) silicon photonics (SiPh) foundry portfolio is designed to help you deliver more data faster, farther and more efficiently than traditional CMOS technologies. 9WG is an industry-first SiPh foundry solution. Built on a 90 nm SOI platform, the offering enables you to leverage high-volume manufacturing along with advanced processing and controls that utilize
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Drs. Brendan Crowley (left) and Enver Kilinc, founders of Micromensio, worked with University of Toronto researchers to develop a low-cost, rapid sensing technology that targets bacterial infections.
A new approach to an old cure Read More »