Logo image for CMC Microsystems

GLOBALFOUNDRIES

Fabrication foundry

GlobalFoundries® 55 nm BCDLite

Technologies / By

CMC Microsystems offers access to the GlobalFoundries® 55 nm BCDLite (GF55BCDLite) technology, designed for applications requiring Bipolar-CMOS-DMOS (BCD) technology, such as high-performance Power Management ICs (PMICs). This process provides optimized RDS(on) for efficient power delivery and features low-power and high-voltage LDMOS transistors, making it ideal for power-sensitive designs. CMC Microsystems offers access to this technology […]

GlobalFoundries® 55 nm BCDLite Read More »

GlobalFoundries® 28 SLPe

Technologies / By

CMC Microsystems offers access to the GlobalFoundries® 28 nm Super Low Power Extended (28SLPe) technology, an ideal process for energy-efficient, mixed-signal, and RF SoC applications. The 28SLPe technology provides best-in-class power efficiency for a wide range of applications. Its optimized 28 nm planar transistor technology enables ultra-low leakage and supports high-density designs for performance and

GlobalFoundries® 28 SLPe Read More »

GlobalFoundries® Silicon Photonics - GF Fotonix™ (45SPCLO)

Technologies / By

The GlobalFoundries® (GF) silicon photonics (SiPh) foundry portfolio is designed to help you deliver more data faster, farther, and more efficiently than traditional CMOS technologies. 45SPCLO, built on a 45 nm SOI platform, enables monolithic integration of RF, analog and Si-Photonic circuits with high efficiency and high data speed. CMC Microsystems offers access to GlobalFoundries technologies

GlobalFoundries® Silicon Photonics - GF Fotonix™ (45SPCLO) Read More »

GlobalFoundries® 12 LP

Technologies / By

CMC offers access to the GlobalFoundries® 12 nm FinFET technology. The 12LP technology is targeted for high-performance, power-efficient SoC applications in demanding, high-volume applications. 3D FinFET transistor technology provides best-in-class performance and power with significant cost advantages from 12nm area scaling. FinFET benefits include high drive current and soft error rate reduction vs planar technology.  FinFET

GlobalFoundries® 12 LP Read More »

GlobalFoundries® 22FDX FDSOI 22 nm

Technologies / By

CMC Microsystems offers access to the GlobalFoundries® (GF) 22FDX™ 22 nm Fully-Depleted Silicon-on-Insulator (FD-SOI) process technology platform for low power embedded applications. The 22 nm FD-SOI transistor technology delivers FinFET-like performance with energy-efficiency. The simultaneous high Ft /high Fmax, high self-gain and high current efficiency of 22FDX enables ultra low power analog/RF/mmWave designs. CMC also offers

GlobalFoundries® 22FDX FDSOI 22 nm Read More »

GlobalFoundries® SiGe 8XP BiCMOS 130 nm

Technologies / By

CMC Microsystems offers access to the GlobalFoundries® (GF) 130 nm high-performance SiGe BiCMOS technology. This technology is well suited for the design of high-speed, low-noise mixed-signal systems. The silicon-proven solutions enable you to maximize performance, integrate extensive digital and RF functionality and exploit an economical silicon platform. An advanced copper metallization feature enables higher current

GlobalFoundries® SiGe 8XP BiCMOS 130 nm Read More »

GlobalFoundries® 45 nm RFSOI

Technologies / By

CMC offers access to the GlobalFoundries® (GF) 45 nm RF Silicon on Insulator (SOI) CMOS technology. The GF 45RFSOI technology is targeted for high performance, next-generation mobile communication infrastructure. This technology offers collective benefits of RF-centric features, device stacking, an optimized BEOL and a high-resistivity substrate. The RF centric process enhancements of 45RFSOI build on

GlobalFoundries® 45 nm RFSOI Read More »

GlobalFoundries® 90 nm BiCMOS SiGe 9HP

Technologies / By

CMC Microsystems offers access to the GlobalFoundries® (GF) 90 nm High-performance SiGe BiCMOS technology. The GF 90 nm high-performance BiCMOS technology is well suited for the design of high-speed logic/mixed-signal systems. The process is configured for 1.2 V/1.8 V/2.5 V/3.3 V high-performance operation at RF frequencies. The technology offers low noise figure, high gain and

GlobalFoundries® 90 nm BiCMOS SiGe 9HP Read More »

GlobalFoundries® Silicon Photonics 9WG

Technologies / By

The GlobalFoundries® (GF) silicon photonics (SiPh) foundry portfolio is designed to help you deliver more data faster, farther and more efficiently than traditional CMOS technologies. 9WG is an industry-first SiPh foundry solution. Built on a 90 nm SOI platform, the offering enables you to leverage high-volume manufacturing along with advanced processing and controls that utilize

GlobalFoundries® Silicon Photonics 9WG Read More »

Scroll to Top
Our office is closed today in observance of Canada Day and will resume operations on the next business day. We’ll respond to your message as soon as possible when we’re back.
Wishing you a wonderful and safe Canada Day!
Skip to content