GlobalFoundries’ 130 RFGaN technology is a GaN-on-silicon RF platform built on the company’s mature 130 nm manufacturing infrastructure, enabling the integration of high-efficiency GaN devices with silicon-based control and driver circuitry. By leveraging GaN’s high breakdown voltage, high electron mobility, and superior power density, the 130 RFGaN process targets linear, efficient RF power amplifiers for infrastructure, radar, and wideband communication systems.
The use of 200 mm silicon substrates within GF’s established 130 nm ecosystem enables cost-effective scaling, improved thermal performance, and compatibility with CMOS and BiCMOS process modules, making the platform suitable for both compact front-end modules and large-signal RF systems. Overall, 130 RFGaN provides a performance-efficient path for designers requiring high output power, high frequency operation, and the manufacturability of a volume silicon foundry.
For more information, refer to GlobalFoundries’ webpage GlobalFoundries Licenses GaN Technology from TSMC to Accelerate U.S.-Manufactured Power Portfolio for Datacenter, Industrial and Automotive Customers | GlobalFoundries.
Applications
- Datacenters
- Automotive power
- Renewable energy
- Fast charging
