GlobalFoundries® 90 nm BiCMOS SiGe 9HP


CMC Microsystems offers access to the GlobalFoundries (GF) 90 nm High-performance SiGe BiCMOS technology. The GF 90 nm high-performance BiCMOS technology is well suited for the design of high-speed logic/mixed-signal systems. The process is configured for 1.2 V/1.8 V/2.5 V/3.3 V high-performance operation at RF frequencies. The technology offers low noise figure, high gain and breakdown operation with excellent thermal stability. The technology PDK comprises of a broad mix of standard and RF-centric elements that facilitate an integrated digital and RF design environment.

For more information, please refer to the GlobalFoundries RF SOI Technologies web page.

CMC Microsystems offers access to GlobalFoundries technologies via its cost-shared multi-project wafer runs. To access this technology, please contact fab@cmc.ca.

The process flavour supported by CMC is:
Mixed-signal/RF 1P10M process configured for 1.2 V/1.8 V/2.5 V/3.3 V and designed for high performance and speed.


This technology is suitable for:

  • RF/mixed-signal designs
  • High-speed digital circuits
  • Low power circuits

Potential applications include:

  • RF, microwave systems
  • Optical communication systems
  • Automotive/Aerospace Systems
  • Wireless infrastructures
  • Test/Measurement systems


  • 1.2 V/1.8 V/2.5 V/3.3 V 
  • 1P10M process 
  • Native/HVT FETs 
  • ft/fmax 310/370GHz 
  • Twin_ or triple_well (NFET in isolated pwell) CMOS technology 
  • MIM/Dual/high Q MIM capcitors 
  • Series/Parallel spirals Inductors 
  • PIN / Schottky Barrier diode 

Design Kits and Libraries

  • 90HPSIGE-9HP  V1.3_0.0


Subscribers (Academics in Canada)
Subscribers (Academics in Canada, Peer Reviewed)
Academics outside of Canada or Industry

Pricing will be provided under a 3-way NDA. Contact fab@cmc.ca.


Contact CMC. Contact fab@cmc.ca for MPW access, or sales@cmc.ca for a dedicated run.


Contact licensing@cmc.ca.

Minimum Subscription Required: Research

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