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Technologies

AMF Silicon Photonics High-Performance Fabrication Process

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AMF High-Performance technology was engineered to tackle the high-speed, ultra-low-loss demands of next-generation applications. The improved material properties and proven production stabilities deliver unmatched performance for applications demanding higher bandwidth and lower latency. Process Modules Silicon-on-insulator, 220-nm top Si film, 3000-nm buried oxide (BOX) High resistivity handle wafer (>750 ohm-cm) 193-nm deep UV lithography for […]

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3iT Superconducting Quantum Al_JJ_Nb Two-layer Process

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CMC offers this process as part of a Multi-project wafer (MPW) service. This process consists of Aluminum-Aluminum oxide-Aluminum Manhattan-style Josephson junctions with an additional Nb layer for the other circuit structures. The substrate is sapphire, and the critical current density is 2 uA/um2 with a junction size ranging from 100 nm to 300 nm. Note: The

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GlobalFoundries® 55 nm BCDLite

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CMC Microsystems offers access to the GlobalFoundries® 55 nm BCDLite (GF55BCDLite) technology, designed for applications requiring Bipolar-CMOS-DMOS (BCD) technology, such as high-performance Power Management ICs (PMICs). This process provides optimized RDS(on) for efficient power delivery and features low-power and high-voltage LDMOS transistors, making it ideal for power-sensitive designs. CMC Microsystems offers access to this technology

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GlobalFoundries® 28 SLPe

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CMC Microsystems offers access to the GlobalFoundries® 28 nm Super Low Power Extended (28SLPe) technology, an ideal process for energy-efficient, mixed-signal, and RF SoC applications. The 28SLPe technology provides best-in-class power efficiency for a wide range of applications. Its optimized 28 nm planar transistor technology enables ultra-low leakage and supports high-density designs for performance and

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GlobalFoundries® Silicon Photonics - GF Fotonix™ (45SPCLO)

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The GlobalFoundries® (GF) silicon photonics (SiPh) foundry portfolio is designed to help you deliver more data faster, farther, and more efficiently than traditional CMOS technologies. 45SPCLO, built on a 45 nm SOI platform, enables monolithic integration of RF, analog and Si-Photonic circuits with high efficiency and high data speed. CMC Microsystems offers access to GlobalFoundries technologies

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VTT Niobium SWAPS Junction Process

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This two-layer process allows for the fabrication of Niobium side-wall passivated junctions via an Nb-Al-AlOx-Nb tri-layer, alongside an Nb wiring layer on top.  CMC offers this process as part of a multi-project wafer (MPW) service. Nb-Al-ALOx-Nb trilayer junctions  High-resistivity silicon substrate Nb wiring layer on top The process provides 20 copies of the designs. Applications

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Applied Nanotools (ANT) Silicon Nitride (SiN) Fabrication Process

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Silicon nitride with device layer thickness 400 nm and buffer oxide Layer thickness 4.5 µm 100 keV electron-beam lithography system enabling features down to 120 nm Fully etched devices (etched down to the buffer oxide) are created using an e-beam mask material and anisotropic ICP-RIE etching process. Tri-layer TiW/Al metallization and TiW alloy heater are available

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Applied Nanotools (ANT) NanoSOI Fabrication Process

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Silicon-on-insulator, 220-nm top Si film, 2000-nm buried oxide (BOX) 100 keV electron-beam lithography system enabling features down to 60 nm One full etch of the top silicon for standard MPW run, partial silicon etching will be available in near future Tri-layer TiW/Al metallization and TiW alloy heater are available Metal oxide window, deep trench for

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GlobalFoundries® 12 LP

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CMC offers access to the GlobalFoundries® 12 nm FinFET technology. The 12LP technology is targeted for high-performance, power-efficient SoC applications in demanding, high-volume applications. 3D FinFET transistor technology provides best-in-class performance and power with significant cost advantages from 12nm area scaling. FinFET benefits include high drive current and soft error rate reduction vs planar technology.  FinFET

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GlobalFoundries® 22FDX FDSOI 22 nm

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CMC Microsystems offers access to the GlobalFoundries® (GF) 22FDXâ„¢ 22 nm Fully-Depleted Silicon-on-Insulator (FD-SOI) process technology platform for low power embedded applications. The 22 nm FD-SOI transistor technology delivers FinFET-like performance with energy-efficiency. The simultaneous high Ft /high Fmax, high self-gain and high current efficiency of 22FDX enables ultra low power analog/RF/mmWave designs. For more information,

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GlobalFoundries® SiGe 8XP BiCMOS 130 nm

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CMC Microsystems offers access to the GlobalFoundries® (GF) 130 nm high-performance SiGe BiCMOS technology. This technology is well suited for the design of high-speed, low-noise mixed-signal systems. The silicon-proven solutions enable you to maximize performance, integrate extensive digital and RF functionality and exploit an economical silicon platform. An advanced copper metallization feature enables higher current

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GlobalFoundries® 45 nm RFSOI

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CMC offers access to the GlobalFoundries® (GF) 45 nm RF Silicon on Insulator (SOI) CMOS technology. The GF 45RFSOI technology is targeted for high performance, next-generation mobile communication infrastructure. This technology offers collective benefits of RF-centric features, device stacking, an optimized BEOL and a high-resistivity substrate. The RF centric process enhancements of 45RFSOI build on

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GlobalFoundries® 90 nm BiCMOS SiGe 9HP

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CMC Microsystems offers access to the GlobalFoundries® (GF) 90 nm High-performance SiGe BiCMOS technology. The GF 90 nm high-performance BiCMOS technology is well suited for the design of high-speed logic/mixed-signal systems. The process is configured for 1.2 V/1.8 V/2.5 V/3.3 V high-performance operation at RF frequencies. The technology offers low noise figure, high gain and

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GlobalFoundries® Silicon Photonics 9WG

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The GlobalFoundries® (GF) silicon photonics (SiPh) foundry portfolio is designed to help you deliver more data faster, farther and more efficiently than traditional CMOS technologies. 9WG is an industry-first SiPh foundry solution. Built on a 90 nm SOI platform, the offering enables you to leverage high-volume manufacturing along with advanced processing and controls that utilize

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Science Foundry Post-Processing for Poly MEMS

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In partnership with Science Foundry, CMC offers users access to the Poly MEMS technology. Poly MEMS technology is a triple polysilicon, single metal surface micromachining process with deposited oxide (PSG) as the sacrificial material, and silicon nitride for electrical isolation from the substrate. Post-processing for Poly MEMS offers optional HF release and supercritical carbon dioxide

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Science Foundry Poly MEMS Multi-User MEMS Process Technology

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CMC’s multi-project wafer service delivers the MEMS technology, through a partnership with Science Foundry. The Poly MEMS technology is a triple polysilicon, single metal surface micromachining process with deposited oxide (PSG) as the sacrificial material, and silicon nitride for electrical isolation from the substrate. CMC also offers optional HF release and supercritical carbon dioxide drying.

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Teledyne Micralyne Micralyne MicraGEM-Siâ„¢ MEMS Process

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Micralyne MicraGEM-SiTM is a silicon-on-insulator (SOI) based MEMS process which will reduce the initial cost and risk of prototype development, while speeding the time to market for MEMS- Based devices. MicraGEM-SiTM is ideally suited for the manufacture of tilting mirrors and mirror arrays for variable optical attenuators (VOA) and wavelength selective switch (WSS) modules, commonly used in

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AMF Silicon Photonics General-Purpose Fabrication Process

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Silicon-on-insulator, 220-nm top Si film, 3000-nm buried oxide (BOX) High resistivity handle wafer (>750 ohm-cm) 193-nm deep UV lithography for waveguides, enabling features down to approximately 140 nm Two partial etches and one full etch of the top silicon PECVD Silicon Nitride waveguide integration 6 implants for optical modulators (P++, P+, P, N++, N+, N) Germanium

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AMS 0.35 µm CMOS Process Technology (High-Voltage)

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This 0.35 µm CMOS technology offers four metal layers, digital standard cells, an anti-reflective coating and high-efficiency photodiodes, and bulk micromachining. CMC’s multi-project wafer service delivers this technology from austriamicrosystems, offering three processes: Basic, Opto and High-Voltage (see details below). The technology is suitable for: High-Voltage Process (H35B4D3) Details Technology Features: 4 metal and 2 poly layers with a

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AMS 0.35 µm CMOS Process Technology (Opto)

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This 0.35 μm CMOS technology offers four metal layers, digital standard cells, an anti-reflective coating and high-efficiency photodiodes, and bulk micromachining. CMC’s multi-project wafer service delivers this technology from austriamicrosystems, offering three processes: Basic, Opto (see details below) and High-Voltage. Opto Process (C35B4O1) Details Technology Features: 4 metal and 2 poly layers (similar to basic option) High-efficiency

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AMS 0.35 µm CMOS Process Technology (Basic)

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This 0.35 μm CMOS technology offers four metal layers, digital standard cells, an anti-reflective coating and high-efficiency photodiodes, and bulk micromachining. CMC’s multi-project wafer service delivers this technology from austriamicrosystems, offering three processes: Basic (see details below), Opto and High-Voltage. Basic Process (C35B4C3) Details Technology Features: 4 metal and 2 poly layers Supply Voltage: 3.3/5V Bulk-micromachining option, allowing

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TSMC 0.35 µm CMOS Process Technology

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This 0.35 μm CMOS technology is available through CMC’s multi-project wafer service, which delivers Taiwan Semiconductor Manufacturing Company (TSMC) nanometer and micron-scale CMOS technologies. Applications The 0.35 µm CMOS (CMC term is CMOSP35) process is suitable for: Analog circuits RF circuits Mixed-signal circuits Process Details Electrical Contact Forming Technology: Polycide Layers: 4 metal, 2 poly Supply Voltages:

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TSMC 0.13 µm CMOS RF Mixed-Signal Process

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CMC’s multi-project wafer service is offering the TSMC(CR013G) RF Mixed-Signal technology. This technology has potential applications in RF and mixed-signal systems, and is suitable for: RF and Mixed-signal designs High-speed digital circuits The CR013G PDK is available on CMC’s STC. If you do not have STC access, or require TSMC libraries, please contact [email protected]. For more

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ST 28 nm FD SOI CMOS

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The latest product information can be found at: http://mycmp.fr/datasheet/ic-28nm-cmos28fdsoi. To start the 28-nm licensing process, please submit your design kit request to CMP directly through the link: https://mycmp.fr/requests/design-kit-141.html. Notes: STMicroelectronics prohibits use of this 28-nm technology for any medical or military applications. The expected number of chips to be delivered for this technology is 30.

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