The 28 nm FD-SOI platform from STMicroelectronics delivers a unified process technology enabling mixed-signal, RF, and digital SoC/ASIC integration with best-in-class performance, power, and area (PPA) benefits.
By leveraging ultra-thin-body fully-depleted silicon-on-insulator (UTBB FD-SOI) device physics, the platform supports very low-voltage operation and significantly reduced leakage in standby mode, while offering a wide operating voltage range (for ultra-low power, reduced power at competitive speed, and nominal high-performance modes).
Body-biasing capabilities (forward and reverse) further allow dynamic tuning of threshold voltage to optimize speed or leakage, and the process supports multiple threshold-voltage devices, robust analog/RF integration, and high-reliability memories — making it suited for energy-efficient consumer, IoT/wearable, networking infrastructure and automotive applications alike.
For the latest product information, see the 28nm FD-SOI Technology Catalog.
Notes:
- STMicroelectronics prohibits use of this 28-nm technology for any medical or military applications.
- The expected number of chips to be delivered for this technology is 30.
