CMC offers access to the GlobalFoundries® (GF) 45 nm RFE which is a partially depleted RF SOI on a high resistivity substrate CMOS technology optimized for radio-frequency front-end and mm-wave applications.
This technology offers two gate dielectrics, high voltage support, and low leakage. Three types of nFETs: RVT, ADNFET, and DGADNFET are included for high voltage capabilities, increased isolation and linearity in RF power amplifiers and LNAs. This platform supports passive devices including ESD, and eFuse. 8-metal layers include 2 thick copper layers enable high Q-passives that are suitable for RF front-end modules in 5G wireless infrastructure, satellite communications (SATCOM), phased-array beamformers and aerospace radar systems.
This technology node has a wide range of IPs available including standard cell libraries with different heights, IO libraries, RF modules, memories etc. Libraries are to be obtained directly from the vendors.
For more information, refer to GlobalFoundries’ webpage at RF SOI | GlobalFoundries.
CMC Microsystems offers access to GlobalFoundries technologies via its cost-shared multi-project wafer runs. To access this technology, please contact [email protected].
The process flavour supported by CMC is: Mixed-signal/RF 2P8M process designed for high-performance RF features.
Applications
This technology is suitable for:
- RF/mixed-signal designs
- High-speed digital circuits
Potential applications include:
- RF, 5G infrastructure
- Radar/high-performance RF applications
- Satellite systems
- Automotive/Aerospace Systems
