GlobalFoundries’ 130CBIC is a 130 nm complementary Bi-CMOS (CBIC) platform that represents the most advanced silicon–germanium (SiGe) process to date. It features high-performance transistors — specifically, NPN devices with ft/fmax exceeding 400 GHz and PNP devices surpassing 200 GHz enabling superior RF performance for demanding applications. This makes 130CBIC ideally suited for markets such as […]
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GlobalFoundries’ 130 RFGaN technology is a GaN-on-silicon RF platform built on the company’s mature 130 nm manufacturing infrastructure, enabling the integration of high-efficiency GaN devices with silicon-based control and driver circuitry. By leveraging GaN’s high breakdown voltage, high electron mobility, and superior power density, the 130 RFGaN process targets linear, efficient RF power amplifiers for
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CMC offers access to the GlobalFoundries® (GF) 45 nm RFE which is a partially depleted RF SOI on a high resistivity substrate CMOS technology optimized for radio-frequency front-end and mm-wave applications. This technology offers two gate dielectrics, high voltage support, and low leakage. Three types of nFETs: RVT, ADNFET, and DGADNFET are included for high
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CMC Microsystems offers access to the GlobalFoundries® 55 nm BCDLite (GF55BCDLite) technology, designed for applications requiring Bipolar-CMOS-DMOS (BCD) technology, such as high-performance Power Management ICs (PMICs). This process provides optimized RDS(on) for efficient power delivery and features low-power and high-voltage LDMOS transistors, making it ideal for power-sensitive designs. For more details, please visit the web
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CMC Microsystems offers access to the GlobalFoundries® 28 nm Super Low Power Extended (28SLPe) technology, an ideal process for energy-efficient, mixed-signal, and RF SoC applications. The 28SLPe technology provides best-in-class power efficiency for a wide range of applications. Its optimized 28 nm planar transistor technology enables ultra-low leakage and supports high-density designs for performance and
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The GlobalFoundries® (GF) silicon photonics (SiPh) foundry portfolio is designed to help you deliver more data faster, farther, and more efficiently than traditional CMOS technologies. 45SPCLO, built on a 45 nm SOI platform, enables monolithic integration of RF, analog and Si-Photonic circuits with high efficiency and high data speed. CMC Microsystems offers access to GlobalFoundries technologies
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A decade after creating the world’s first graduate-level course for designing and making nanophotonic integrated circuits, UBC Professor Lukas Chrostowski enjoys seeing his students continue to push the limits of innovation in this expanding technology.
How student training drove Canada’s success in silicon photonics Read More »
The GlobalFoundries® (GF) silicon photonics (SiPh) foundry portfolio is designed to help you deliver more data faster, farther and more efficiently than traditional CMOS technologies. 9WG is an industry-first SiPh foundry solution. Built on a 90 nm SOI platform, the offering enables you to leverage high-volume manufacturing along with advanced processing and controls that utilize
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Joyce Poon, Sorin Voinigescu and their teams solved a significant problem in short-distance optical communications with their development of a 3-D integrated transmitter using a CMOS driver. Their novel solution combines the advantages of high performance and low power consumption with low-cost, established manufacturing processes.
Global conference recognizes made-in-Canada photonics innovations Read More »
Nanomechanics specialist John P. Davis (left) and his students Pearse
and Callum Doolin developed the first digital photodetector capable of
measuring the quantum properties of nanomechanical systems. Their
instrument, now on the market through their startup company Resolved
Instruments, opens up new opportunities in the emerging field of quantum
technologies.
Resolving a Quantum Conundrum Read More »
