silicon photonics

GlobalFoundries’ 130CBIC is a 130 nm complementary Bi-CMOS (CBIC) platform that represents the most advanced silicon–germanium (SiGe) process to date. It features high-performance transistors — specifically, NPN devices with ft/fmax exceeding 400 GHz and PNP devices surpassing 200 GHz enabling superior RF performance for demanding applications. This makes 130CBIC ideally suited for markets such as

GlobalFoundries’ 130 RFGaN technology is a GaN-on-silicon RF platform built on the company’s mature 130 nm manufacturing infrastructure, enabling the integration of high-efficiency GaN devices with silicon-based control and driver circuitry. By leveraging GaN’s high breakdown voltage, high electron mobility, and superior power density, the 130 RFGaN process targets linear, efficient RF power amplifiers for

CMC offers access to the GlobalFoundries® (GF) 45 nm RFE which is a partially depleted RF SOI on a high resistivity substrate CMOS technology optimized for radio-frequency front-end and mm-wave applications. This technology offers two gate dielectrics, high voltage support, and low leakage. Three types of nFETs: RVT, ADNFET, and DGADNFET are included for high

CMC Microsystems offers access to the GlobalFoundries® 28 nm Super Low Power Extended (28SLPe) technology, an ideal process for energy-efficient, mixed-signal, and RF SoC applications. The 28SLPe technology provides best-in-class power efficiency for a wide range of applications. Its optimized 28 nm planar transistor technology enables ultra-low leakage and supports high-density designs for performance and