Featured Photontonics tools and technologies on spotlight pages
GlobalFoundries’ 130CBIC is a 130 nm complementary Bi-CMOS (CBIC) platform that represents the most advanced silicon–germanium (SiGe) process to date. It features high-performance transistors — specifically, NPN devices with ft/fmax exceeding 400 GHz and PNP devices surpassing 200 GHz enabling superior RF performance for demanding applications. This makes 130CBIC ideally suited for markets such as […]
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GlobalFoundries’ 130 RFGaN technology is a GaN-on-silicon RF platform built on the company’s mature 130 nm manufacturing infrastructure, enabling the integration of high-efficiency GaN devices with silicon-based control and driver circuitry. By leveraging GaN’s high breakdown voltage, high electron mobility, and superior power density, the 130 RFGaN process targets linear, efficient RF power amplifiers for
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CMC offers access to the GlobalFoundries® (GF) 45 nm RFE which is a partially depleted RF SOI on a high resistivity substrate CMOS technology optimized for radio-frequency front-end and mm-wave applications. This technology offers two gate dielectrics, high voltage support, and low leakage. Three types of nFETs: RVT, ADNFET, and DGADNFET are included for high
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AMF High-Performance technology was engineered to tackle the high-speed, ultra-low-loss demands of next-generation applications. The improved material properties and proven production stabilities deliver unmatched performance for applications demanding higher bandwidth and lower latency. Process Modules Silicon-on-insulator, 220-nm top Si film, 3000-nm buried oxide (BOX) High resistivity handle wafer (>750 ohm-cm) 193-nm deep UV lithography for
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CMC Microsystems offers access to the GlobalFoundries® 55 nm BCDLite (GF55BCDLite) technology, designed for applications requiring Bipolar-CMOS-DMOS (BCD) technology, such as high-performance Power Management ICs (PMICs). This process provides optimized RDS(on) for efficient power delivery and features low-power and high-voltage LDMOS transistors, making it ideal for power-sensitive designs. For more details, please visit the web
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CMC Microsystems offers access to the GlobalFoundries® 28 nm Super Low Power Extended (28SLPe) technology, an ideal process for energy-efficient, mixed-signal, and RF SoC applications. The 28SLPe technology provides best-in-class power efficiency for a wide range of applications. Its optimized 28 nm planar transistor technology enables ultra-low leakage and supports high-density designs for performance and
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Keysight Optical Solutions Group software includes the following tools: RSoft Component Suite: Component design of both passive and active devices. RSoft System Tools: System simulation and design automation of photonic integrated circuits (PIC’s). Code V: Optical Design software for lens and optical system design LightTools Illumination software: Design, Optimization and analysis solution for illumination optics
Keysight Optical Solutions Group (OSG) Tools (RSOFT, Code V, and LightTools) Read More »
The GlobalFoundries® (GF) silicon photonics (SiPh) foundry portfolio is designed to help you deliver more data faster, farther, and more efficiently than traditional CMOS technologies. 45SPCLO, built on a 45 nm SOI platform, enables monolithic integration of RF, analog and Si-Photonic circuits with high efficiency and high data speed. CMC Microsystems offers access to GlobalFoundries technologies
GlobalFoundries® Silicon Photonics - GF Fotonix™ (45SPCLO) Read More »
Silicon nitride with device layer thickness 400 nm and buffer oxide Layer thickness 4.5 µm 100 keV electron-beam lithography system enabling features down to 120 nm Fully etched devices (etched down to the buffer oxide) are created using an e-beam mask material and anisotropic ICP-RIE etching process. Tri-layer TiW/Al metallization and TiW alloy heater are available
Applied Nanotools (ANT) Silicon Nitride (SiN) Fabrication Process Read More »
Silicon-on-insulator, 220-nm top Si film, 2000-nm buried oxide (BOX) 100 keV electron-beam lithography system enabling features down to 60 nm One full etch of the top silicon for standard MPW run, partial silicon etching will be available in near future Tri-layer TiW/Al metallization and TiW alloy heater are available Metal oxide window, deep trench for
Applied Nanotools (ANT) NanoSOI Fabrication Process Read More »
Synopsys Photonic System Tools software includes the following tools: OptoCompiler with Custom Compiler: A unified electronic and photonics design platform for photonic IC design. OptSim: Provides comprehensive simulations of photonic ICs and optical communication systems. For more information, see the full list of Photonic Solutions Products. Licensing Requirements or Restrictions Technical Details What You Get
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The GlobalFoundries® (GF) silicon photonics (SiPh) foundry portfolio is designed to help you deliver more data faster, farther and more efficiently than traditional CMOS technologies. 9WG is an industry-first SiPh foundry solution. Built on a 90 nm SOI platform, the offering enables you to leverage high-volume manufacturing along with advanced processing and controls that utilize
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Silicon-on-insulator, 220-nm top Si film, 3000-nm buried oxide (BOX) High resistivity handle wafer (>750 ohm-cm) 193-nm deep UV lithography for waveguides, enabling features down to approximately 140 nm Two partial etches and one full etch of the top silicon PECVD Silicon Nitride waveguide integration 6 implants for optical modulators (P++, P+, P, N++, N+, N) Germanium
AMF Silicon Photonics General-Purpose Fabrication Process Read More »
Note After June 2026, Luceda users will no longer have access to licenses through CMC, and should contact Luceda for free academic licenses. Luceda is proud to serve academics in Canada with free licenses of our products. Contact Luceda directly for license access at [email protected] This will also be accompanied by an onboarding session and
Luceda IPKISS Photonics Design Tool Read More »
