GLOBALFOUNDRIES 90 nm BiCMOS SiGe 9HP
CMC Microsystems offers access to the GLOBALFOUNDRIES (GF) 90 nm High-performance SiGe BiCMOS technology. The GF 90 nm high-performance BiCMOS technology is well suited for the design of high-speed logic/mixed-signal systems. The process is configured for 1.2 V/1.8 V/2.5 V/3.3 V high-performance operation at RF frequencies. The technology offers low noise figure, high gain and breakdown operation with excellent thermal stability. The technology PDK comprises of a broad mix of standard and RF-centric elements that facilitate an integrated digital and RF design environment.
For more information, please refer to the GLOBALFOUNDRIES RF SOI Technologies web page.
CMC Microsystems offers access to GLOBALFOUNDRIES technologies via its cost-shared multi-project wafer runs. To access this technology, please contact email@example.com.
The process flavour supported by CMC is:
Mixed-signal/RF 1P10M process configured for 1.2 V/1.8 V/2.5 V/3.3 V and designed for high performance and speed.
- 1.2 V/1.8 V/2.5 V/3.3 V
- 1P10M process
- Native/HVT FETs
- ft/fmax 310/370GHz
- Twin_ or triple_well (NFET in isolated pwell) CMOS technology
- MIM/Dual/high Q MIM capcitors
- Series/Parallel spirals Inductors
- PIN / Schottky Barrier diode
This technology is suitable for:
- RF/mixed-signal designs
- High-speed digital circuits
- Low power circuits
Potential applications include:
- RF, microwave systems
- Optical communication systems
- Automotive/Aerospace Systems
- Wireless infrastructures
- Test/Measurement systems
- 90HPSIGE-9HP V1.3_0.0