GLOBALFOUNDRIES 45 nm RFSOI
CMC offers access to the GLOBALFOUNDRIES (GF) 45 nm RF Silicon on Insulator (SOI) CMOS technology. The GF 45RFSOI technology is targeted for high performance, next-generation mobile communication infrastructure. This technology offers collective benefits of RF-centric features, device stacking, an optimized BEOL and a high-resistivity substrate. The RF centric process enhancements of 45RFSOI build on the inherent advantages of its SOI technology base delivers an optimized RF performance. The technology is well suited for application-specific integrated circuit (ASIC) designs, SRAM, and custom logic designs.
For more information, please refer to the GLOBALFOUNDRIES RF SOI Technologies web page.
CMC Microsystems offers access to GLOBALFOUNDRIES technologies via its cost-shared multi-project wafer runs. To access this technology, please contact email@example.com.
The process flavour supported by CMC is:
Mixed-signal/RF 1P8M process configured for 1 V/1.5 V/1.8 V and designed for high-performance RF features.
- 1 V/1.5 V/1.8 V
- 1P8M process
- Native/HVT/SVT/UVT FETs
- N+ silicide resistor
- Vertical natural capacitor
- BEOL inductors
- Thin oxide Varactor
- ft/fmax 290/410 GHz
This technology is suitable for:
- RF/mixed-signal designs
- High-speed digital circuits
Potential applications include:
- RF, 5G infrastructure
- Radar/high-performance RF applications
- Satellite systems
- Automotive/Aerospace Systems
- 45RFSOI-RF V1.2_0.2