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AMF Silicon Photonics High-Performance Fabrication Process

Description

AMF High-Performance technology was engineered to tackle the high-speed, ultra-low-loss demands of next-generation applications. The improved material properties and proven production stabilities deliver unmatched performance for applications demanding higher bandwidth and lower latency.

Process Modules

  • Silicon-on-insulator, 220-nm top Si film, 3000-nm buried oxide (BOX)
  • High resistivity handle wafer (>750 ohm-cm)
  • 193-nm deep UV lithography for waveguides, enabling features down to approximately 140 nm
  • Two partial etches and one full etch of the top silicon
  • LPCVD Silicon Nitride low-loss waveguide integration
  • 7 implants for modulators and photo detectors
  • Germanium deposition
  • Two interconnect metal levels plus metal heater
  • Front side oxide etch to selectively expose waveguides, e.g. for sensing applications
  • Deep trench with etched facets for edge coupling

Library of Available Components

  • High-speed modulators
  • High-speed photodetectors
  • Grating couplers for fiber coupling
  • Deep trench and nano-tapers for edge coupling
  • Passive optical components (MMIs, Crossings, Spot size converters and Phase shifters)

Applications

  • Data Centers & Telecommunications: High-speed transceivers, AI infrastructures
  • Autonomous Systems: LiDAR
  • Medical & Healthcare: Biosensing and advanced imaging
  • Quantum Technologies: Quantum computing, secure Quantum key distribution
  • Aerospace & Defense: Satellite communications, radio-frequency light systems

Features

  • Advanced high-speed Modulators and Ge Photodetectors designed for ultra-fast data transmission in O and C bands.
  • Non-Suspended Edge Coupler, a critical innovation for precise passive alignment.
  • Access to LPCVD Silicon Nitride technology for improved material properties and performance.

Licensing

For Canadian Academics

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