Piezoelectric Micromachined Ultrasonic Transducer (PMUT) for fingerprint sensing, medical imaging, industrial sensors, biosensors, gesture control. For a complete description, see the webinar at SilTerra – PMUT Webinar on Emerging PMUT Applications and Manufacturing Solutions – YouTube. Note: The expected number of chips to be delivered for this technology is 25 dice per design.
The GlobalFoundries® (GF) silicon photonics (SiPh) foundry portfolio is designed to help you deliver more data faster, farther, and more efficiently than traditional CMOS technologies. 45SPCLO, built on a 45 nm SOI platform, enables monolithic integration of RF, analog and Si-Photonic circuits with high efficiency and high data speed. CMC Microsystems offers access to GlobalFoundries technologies …
GlobalFoundries® Silicon Photonics - GF Fotonix™ (45SPCLO) Read More »
This two-layer process allows for the fabrication of Niobium side-wall passivated junctions via an Nb-Al-AlOx-Nb tri-layer, alongside an Nb wiring layer on top. CMC offers this process as part of a multi-project wafer (MPW) service. Nb-Al-ALOx-Nb trilayer junctions High-resistivity silicon substrate Nb wiring layer on top The process provides 20 copies of the designs. Applications …
Silicon nitride with device layer thickness 400 nm and buffer oxide Layer thickness 4.5 µm 100 keV electron-beam lithography system enabling features down to 120 nm Fully etched devices (etched down to the buffer oxide) are created using an e-beam mask material and anisotropic ICP-RIE etching process. Tri-layer TiW/Al metallization and TiW alloy heater are available …
Applied Nanotools (ANT) Silicon Nitride (SiN) Fabrication Process Read More »
Silicon-on-insulator, 220-nm top Si film, 2000-nm buried oxide (BOX) 100 keV electron-beam lithography system enabling features down to 60 nm One full etch of the top silicon for standard MPW run, partial silicon etching will be available in near future Tri-layer TiW/Al metallization and TiW alloy heater are available Metal oxide window, deep trench for …
Applied Nanotools (ANT) NanoSOI Fabrication Process Read More »
CMC offers access to the GlobalFoundries® 12 nm FinFET technologies. The 12LP technology is targeted for high-performance, power-efficient SoC applications in demanding, high-volume applications. 3D FinFET transistor technology provides best-in-class performance and power with significant cost advantages from 12nm area scaling. FinFET benefits include high drive current, superior mismatch and Vmin and >10x SER (soft …
CMC supports prototyping services to grow a variety of structures on InP, GaAs and Ge substrates through industrial standard foundries, for research and applications in optoelectronics and photonics. Subsidized rates are available for CMC subscribers. Methods of Epitaxy Molecular Beam Epitaxy (MBE) on GaAs and Ge substrates Gas-Source MBE on InP substrate Metal-Organic Chemical Vapor …
CMC Microsystems offers access to the GlobalFoundries® (GF) 22FDX™ 22 nm Fully-Depleted Silicon-on-Insulator (FD-SOI) process technology platform for low power embedded applications. The 22 nm FD-SOI transistor technology delivers FinFET-like performance with energy-efficiency. The simultaneous high Ft /high Fmax, high self-gain and high current efficiency of 22FDX enables ultra low power analog/RF/mmWave designs. For more information, …
CMC Microsystems offers access to the GlobalFoundries® (GF) 130 nm high-performance SiGe BiCMOS technology. This technology is well suited for the design of high-speed, low-noise mixed-signal systems. The silicon-proven solutions enable you to maximize performance, integrate extensive digital and RF functionality and exploit an economical silicon platform. An advanced copper metallization feature enables higher current …
CMC Microsystems offers access to the GlobalFoundries® (GF) 90 nm High-performance SiGe BiCMOS technology. The GF 90 nm high-performance BiCMOS technology is well suited for the design of high-speed logic/mixed-signal systems. The process is configured for 1.2 V/1.8 V/2.5 V/3.3 V high-performance operation at RF frequencies. The technology offers low noise figure, high gain and …
The GlobalFoundries® (GF) silicon photonics (SiPh) foundry portfolio is designed to help you deliver more data faster, farther and more efficiently than traditional CMOS technologies. 9WG is an industry-first SiPh foundry solution. Built on a 90 nm SOI platform, the offering enables you to leverage high-volume manufacturing along with advanced processing and controls that utilize …
PiezoMUMPs is a piezoelectric-based MEMS process for ME, ECE and biomedical researchers to develop sensors, energy harvesters, ultrasonic transducers, microphones, and self-contained microsystems for automotive, aerospace, healthcare and entertainment electronics markets. Note: The expected number of chips to be delivered for this technology is 15.
Micralyne MicraGEM-SiTM is a silicon-on-insulator (SOI) based MEMS process which will reduce the initial cost and risk of prototype development, while speeding the time to market for MEMS- Based devices. MicraGEM-SiTM is ideally suited for the manufacture of tilting mirrors and mirror arrays for variable optical attenuators (VOA) and wavelength selective switch (WSS) modules, commonly used in …
Teledyne Micralyne Micralyne MicraGEM-Si™ MEMS Process Read More »
Silicon-on-insulator, 220-nm top Si film, 3000-nm buried oxide (BOX) High resistivity handle wafer (>750 ohm-cm) 193-nm deep UV lithography for waveguides, enabling features down to approximately 140 nm Two partial etches and one full etch of the top silicon PECVD Silicon Nitride waveguide integration 6 implants for optical modulators (P++, P+, P, N++, N+, N) Germanium …
AMF Silicon Photonics General-Purpose Fabrication Process Read More »
This 0.35 µm CMOS technology offers four metal layers, digital standard cells, an anti-reflective coating and high-efficiency photodiodes, and bulk micromachining. CMC’s multi-project wafer service delivers this technology from austriamicrosystems, offering three processes: Basic, Opto and High-Voltage (see details below). The technology is suitable for: High-Voltage Process (H35B4D3) Details Technology Features: 4 metal and 2 poly layers with a …
AMS 0.35 µm CMOS Process Technology (High-Voltage) Read More »
This 0.35 μm CMOS technology offers four metal layers, digital standard cells, an anti-reflective coating and high-efficiency photodiodes, and bulk micromachining. CMC’s multi-project wafer service delivers this technology from austriamicrosystems, offering three processes: Basic, Opto (see details below) and High-Voltage. Opto Process (C35B4O1) Details Technology Features: 4 metal and 2 poly layers (similar to basic option) High-efficiency …
This 0.35 μm CMOS technology offers four metal layers, digital standard cells, an anti-reflective coating and high-efficiency photodiodes, and bulk micromachining. CMC’s multi-project wafer service delivers this technology from austriamicrosystems, offering three processes: Basic (see details below), Opto and High-Voltage. Basic Process (C35B4C3) Details Technology Features: 4 metal and 2 poly layers Supply Voltage: 3.3/5V Bulk-micromachining option, allowing …
This 0.35 μm CMOS technology is available through CMC’s multi-project wafer service, which delivers Taiwan Semiconductor Manufacturing Company (TSMC) nanometer and micron-scale CMOS technologies. Applications The 0.35 µm CMOS (CMC term is CMOSP35) process is suitable for: Analog circuits RF circuits Mixed-signal circuits Process Details Electrical Contact Forming Technology: Polycide Layers: 4 metal, 2 poly Supply Voltages: …
The latest product information can be found at: http://mycmp.fr/datasheet/ic-28nm-cmos28fdsoi. To start the 28-nm licensing process, please submit your design kit request to CMP directly through the link: https://mycmp.fr/requests/design-kit-141.html. Notes: STMicroelectronics prohibits use of this 28-nm technology for any medical or military applications. The expected number of chips to be delivered for this technology is 30.
Electronic Sensor Platform (ESP) Note: The expected number of chips to be delivered for this technology is 11 (10 x 10 mm).
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