Applied Nanotools (ANT) Silicon Nitride (SiN) Fabrication Process
Silicon nitride with device layer thickness 400 nm and buffer oxide Layer thickness 4.5 µm 100 keV electron-beam lithography system enabling features down to 120 nm Fully etched devices (etched down to the buffer oxide) are created using an e-beam mask material and anisotropic ICP-RIE etching process. Tri-layer TiW/Al metallization and TiW alloy heater are available […]
Applied Nanotools (ANT) Silicon Nitride (SiN) Fabrication Process Read More »








